Substrate processing apparatus

ABSTRACT

A substrate processing apparatus includes a chamber, a substrate holding part, a substrate rotating mechanism, and a processing liquid supply part. The chamber includes a chamber body and a chamber cover, and the chamber cover is moved up and down by a chamber opening and closing mechanism. A top plate is attached to the chamber cover. While the chamber cover is in contact with the chamber body, a sealed space is formed and processing is performed. When the chamber cover is moved up, an annular opening is formed between the chamber cover and the chamber body. A cup part is positioned outside the annular opening. A processing liquid spattering from a substrate is received by the cup part.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.15/383,718, filed Dec. 19, 2016, which is a divisional application ofU.S. Pat. No. 9,555,437, issued Jan. 31, 2017, which claims the benefitof Japanese Patent Application Nos. 2012-191284, filed Aug. 31, 2012,2012-191285, filed Aug. 31, 2012, 2012-210558, filed Sep. 25, 2012,2012-210559, filed Sep. 25, 2012, and 2012-210560, filed Sep. 25, 2012,which are incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a substrate processing apparatus forprocessing a substrate.

BACKGROUND ART

In a process of manufacturing a semiconductor substrate (hereinafter,referred to simply as a “substrate”), conventionally, variousprocessings are performed on a substrate by using various kinds ofsubstrate processing apparatuses. By supplying a processing liquid ontoa substrate having a surface on which a resist pattern is formed, forexample, a processing such as etching or the like is performed on thesurface of the substrate. Further, after the etching is finished, aprocess of removing the resist from the substrate and a process ofcleaning the substrate are also performed.

In an apparatus disclosed in Japanese Patent Application Laid-Open No.9-246156 (Document 1), after rinsing a developer or the like on a waferby using a rinse liquid, the wafer is dried. Specifically, a wafer isloaded into a rinse processing part and absorbed by a wafer absorptionpart, and after an opening of the rinse processing part is closed by ashutter, an internal space of the rinse processing part is exhausted.Then, in the internal space which has been brought into a reducedpressure atmosphere, the rinse liquid is supplied onto the wafer whilethe wafer is rotated together with the wafer absorption part at lowspeed, and after that, the wafer is dried by rotating the wafer at highspeed. Further, Japanese Patent Application Laid-Open No. 2006-105524(Document 2) discloses a vacuum drying apparatus for drying a thin filmformed on a main surface of a substrate while the inside of a chamber inwhich the substrate is contained is brought into a reduced pressureatmosphere.

When processings using various liquids and/or a drying process areperformed in one chamber, various processing liquids are deposited ontoa chamber inner wall, and this reduces the collection efficiency of theprocessing liquids and shortens the lifetimes of the processing liquidsin recycling. Further, when some deposits are left on the chamber innerwall due to a plurality of processing liquids, this may cause particles.Furthermore, there is a possibility of causing heat generation and/orsmoke generation by mixture of a plurality of processing liquids. On theother hand, in order to reduce the amount of gas to be used for theprocessings, it is preferable that the volume of a space in the chambershould be small.

SUMMARY OF INVENTION

The present invention is intended for a substrate processing apparatusfor processing a substrate, and it is an object of the present inventionto provide a substrate processing apparatus capable of collecting aprocessing liquid with high efficiency and performing variousprocessings in a small chamber. It is another object of the presentinvention to receive a processing liquid in a sealed space by using acup part disposed outside the chamber.

The substrate processing apparatus according to one aspect of thepresent invention includes a chamber which forms therein an internalspace which is sealed, a chamber opening and closing mechanism formoving up and down a chamber movable part including an upper portion ora lower portion of the chamber relative to the other portion of thechamber, a substrate holding part disposed in the chamber, for holding asubstrate horizontally, a substrate rotating mechanism for rotating thesubstrate together with the substrate holding part about a central axisoriented in a vertical direction, a processing liquid supply part forsupplying a processing liquid onto an upper surface or a lower surfaceof the substrate, and a cup part positioned on an outer side in a radialdirection relative to an annular opening formed around the substrate bya movement of the chamber movable part, for receiving the processingliquid spattering from the substrate being rotated. It is therebypossible to provide a substrate processing apparatus capable ofcollecting the processing liquid with high efficiency and performingvarious processings in a small chamber.

In another aspect of the present invention, the substrate processingapparatus includes a chamber which forms therein an internal space whichis sealed, a chamber opening and closing mechanism for moving up anddown a chamber cover including an upper portion of the chamber relativeto the other portion of the chamber, a substrate holding part disposedin the chamber, for holding a substrate horizontally, a substraterotating mechanism for rotating the substrate together with thesubstrate holding part about a central axis oriented in a verticaldirection, a processing liquid supply part for supplying a processingliquid onto the substrate, and a top plate which has a plate-like shapeperpendicular to the central axis and is attached to the chamber coverrotatably about the central axis, being engaged with the substrateholding part in a circumferential direction about the central axis whilethe chamber forms the internal space which is sealed. It is therebypossible to prevent a liquid deposited on the inside of the chamber fromdropping onto the substrate, with a simple structure.

In still another aspect of the present invention, the substrateprocessing apparatus includes a chamber having a chamber body and achamber cover and forming an internal space which is sealed by closingan upper opening of the chamber body by the chamber cover, a chamberopening and closing mechanism for moving the chamber cover in a verticaldirection relative to the chamber body, a substrate holding partdisposed in the chamber, for holding a substrate horizontally, asubstrate rotating mechanism for rotating the substrate together withthe substrate holding part about a central axis oriented in the verticaldirection, a processing liquid supply part for supplying a processingliquid onto the substrate, a cup part positioned on an outer side in aradial direction relative to an annular opening formed around thesubstrate by causing the chamber cover to be apart from the chamberbody, along the entire circumference thereof, for receiving theprocessing liquid spattering from the substrate being rotated, and a cupmoving mechanism for moving the cup part in the vertical directionbetween a first position on the outer side in the radial directionrelative to the annular opening and a second position lower than thefirst position, and in the substrate processing apparatus of the presentinvention, the cup part includes a sidewall portion having asubstantially cylindrical shape and being opposed to the annular openingin the radial direction at the first position, a first seal portion onwhich a first seal is formed between the first seal portion and thechamber cover along the entire circumference of the chamber cover at thefirst position, and a second seal portion on which a second seal isformed between the second seal portion and the chamber body along theentire circumference of the chamber body at the first position, and asealed space is formed by the chamber cover and the chamber body in astate where the annular opening is formed, and the cup part positionedat the first position. It is thereby possible to receive the processingliquid in the sealed space by using the cup part disposed outside thechamber.

In yet another aspect of the present invention, the substrate processingapparatus includes a substrate supporting part for supporting asubstrate horizontally from below, an upper rotating member disposedabove the substrate supporting part, a position regulating member forregulating a position of the upper rotating member relative to thesubstrate supporting part in a circumferential direction about a centralaxis oriented in a vertical direction, a substrate retaining part fixedto the upper rotating member, for retaining the substrate held by thesubstrate supporting part from above, a substrate rotating mechanism forrotating the substrate together with the substrate supporting part, thesubstrate retaining part, and the upper rotating member, and aprocessing liquid supply part for supplying a processing liquid onto thesubstrate, and in the substrate processing apparatus of the presentinvention, the substrate supporting part includes a plurality of firstcontact parts which come into contact with an outer edge of thesubstrate at a plurality of first contact positions, respectively, andthe substrate retaining part includes a plurality of second contactparts which come into contact with the outer edge of the substrate at aplurality of second contact positions different from the plurality offirst contact positions, respectively, in the circumferential direction.It is thereby possible to prevent the processing liquid from remainingnear the holding structure for holding the substrate.

In further aspect of the present invention, the substrate processingapparatus includes a chamber having a chamber body and a chamber coverand forming an internal space which is sealed by closing an upperopening of the chamber body by the chamber cover, a chamber opening andclosing mechanism for moving the chamber cover in a vertical directionrelative to the chamber body, a substrate supporting part disposed inthe chamber, for supporting a substrate horizontally, a top platedisposed above the substrate supporting part, having a lower surfaceperpendicular to a central axis oriented in the vertical direction andopposed to the substrate, a position regulating member for regulating aposition of the top plate relative to the substrate supporting part in acircumferential direction about the central axis, a substrate rotatingmechanism for rotating the substrate together with the substratesupporting part and the top plate about the central axis, a processingliquid supply part for supplying a processing liquid onto the substrate,and a top plate moving mechanism for moving the top plate in thevertical direction relative to the chamber cover by using magneticforce. It is thereby possible to change a distance between the top plateand the substrate in the vertical direction in the chamber.

These and other objects, features, aspects and advantages of the presentinvention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross section showing a substrate processing apparatus inaccordance with a first preferred embodiment of the present invention;

FIG. 2 is a block diagram showing a processing liquid supply part and aliquid collecting part;

FIG. 3 is an enlarged view showing the vicinity of a liquid receivingpart;

FIG. 4 is a flowchart showing an exemplary operation of the substrateprocessing apparatus;

FIGS. 5 to 8 are cross sections each showing the substrate processingapparatus;

FIG. 9 is a cross section showing a substrate processing apparatus inaccordance with a second preferred embodiment of the present invention;

FIGS. 10 to 13 are cross sections each showing the substrate processingapparatus;

FIG. 14 is a cross section showing a substrate processing apparatus inaccordance with a third preferred embodiment of the present invention;

FIG. 15 is an enlarged cross section showing the vicinity of a top plateshaft;

FIG. 16 is a block diagram showing a processing liquid supply part and aliquid collecting part;

FIG. 17 is an enlarged view showing part of a chamber and a liquidreceiving part;

FIG. 18 is a bottom view showing a top plate;

FIG. 19 is a plan view showing a substrate supporting part;

FIGS. 20 and 21 are enlarged views each showing part of the chamber andthe liquid receiving part;

FIG. 22 is an enlarged plan view showing part of a substrate holdingpart;

FIG. 23 is an enlarged side elevation view showing the vicinity of afirst contact part;

FIG. 24 is an enlarged side elevation view showing the vicinity of asecond contact part;

FIG. 25 is a flowchart showing an operation flow of substrateprocessing;

FIGS. 26 to 29 are cross sections each showing part of the substrateprocessing apparatus;

FIG. 30 is a cross section showing the substrate processing apparatus;

FIG. 31 is a cross section showing a substrate processing apparatus inaccordance with a fourth preferred embodiment of the present invention;

FIGS. 32 and 33 are cross sections each showing part of the substrateprocessing apparatus;

FIG. 34 is a cross section showing part of a substrate processingapparatus in accordance with a fifth preferred embodiment of the presentinvention;

FIG. 35 is a cross section showing part of the substrate processingapparatus;

FIG. 36 is a cross section showing a substrate processing apparatus inaccordance with a sixth preferred embodiment of the present invention;

FIGS. 37 to 39 are cross sections each showing part of the substrateprocessing apparatus; and

FIG. 40 is a cross section showing another example of a substrateprocessing apparatus.

DESCRIPTION OF EMBODIMENTS

FIG. 1 is a view showing a configuration of a substrate processingapparatus 1 in accordance with the first preferred embodiment of thepresent invention. The substrate processing apparatus 1 is asingle-substrate processing apparatus which supplies a processing liquidonto a semiconductor substrate 9 (hereinafter, referred to simply as a“substrate 9”) having a substantially disk-like shape and therebyprocesses substrates 9 one by one.

The substrate processing apparatus 1 includes a chamber 12, a chamberopening and closing mechanism 131, a substrate holding part 14, asubstrate rotating mechanism 15, a liquid receiving part 16, and a cover17.

The chamber 12 includes a chamber body 121, a chamber cover 122, and atop plate 123. The chamber body 121 is formed of a non-magneticmaterial. The chamber body 121 includes a chamber bottom 21 and achamber sidewall 22. The chamber bottom 21 includes a substantiallydisk-like center portion 211, a cylindrical inner wall portion 212extending downward from an outer edge of the center portion 211, and abase portion 213 extending outward in a radial direction from the innerwall portion 212. When the substrate holding part 14 holds a substrate9, a lower surface 92 of the substrate 9 is opposed to an upper surfaceof the center portion 211. The chamber sidewall 22 has an annular shapeabout a central axis J1 oriented in a vertical direction and protrudesupward from the base portion 213. The member which forms the chambersidewall 22 serves as part of the liquid receiving part 16 as discussedlater.

The chamber cover 122 has a substantially disk-like shape perpendicularto the central axis J1 and includes an upper portion of the chamber 12.The chamber cover 122 closes an upper opening of the chamber body 121.FIG. 1 shows a state in which the chamber cover 122 is apart from thechamber body 121. When the chamber cover 122 closes the upper opening ofthe chamber body 121, an outer edge of the chamber cover 122 is incontact with an upper portion of the chamber sidewall 22.

The top plate 123 has a substantially disk plate-like shapeperpendicular to the central axis J1 and has an opening at its center.When the substrate 9 is held by the substrate holding part 14, the uppersurface 91 of the substrate 9 is opposed to a lower surface of the topplate 123. The top plate 123 is so attached to the chamber cover 122 asto be suspended from the chamber cover 122. More exactly, the top plate123 is attached to the chamber cover 122 with a distance between the topplate 123 and the chamber cover 122 being changeable. The top plate 123is rotatable about the central axis J1 with respect to the chamber cover122.

The chamber opening and closing mechanism 131 moves up and down thechamber cover 122 which is a movable part of the chamber 12 relative tothe other portion of the chamber 12. Hereinafter, the chamber openingand closing mechanism 131 will be referred to as a “cover up-and-downmoving mechanism 131”. By bringing the chamber cover 122 into contactwith the chamber body 121 and pressing the chamber cover 122 toward thechamber body 121, a sealed internal space 120 (see FIG. 7) is formed inthe chamber 12.

The substrate holding part 14 has an annular shape about the centralaxis J1 and holds an outer edge of the substrate 9. The substrateholding part 14 is disposed in the chamber 12 and holds the substrate 9horizontally. In other words, the substrate 9 is held by the substrateholding part 14 with the upper surface 91 thereof directed upward, beingperpendicular to the central axis J1. As a chuck mechanism in which thesubstrate holding part 14 holds the substrate 9, various mechanisms maybe used.

The substrate rotating mechanism 15 is a so-called hollow motor. Thesubstrate rotating mechanism 15 includes a stator part 151 having anannular shape about the central axis J1 and an annular rotor part 152.The rotor part 152 includes a permanent magnet having a substantiallyannular shape. A surface of the permanent magnet is molded by PTFE(polytetrafluoroethylene) resin. The rotor part 152 is disposed in anannular space having a bottom between the inner wall portion 212 and thechamber sidewall 22. The rotor part 152 is connected to the substrateholding part 14 with a connecting member.

The stator part 151 is disposed on an outer side in the radial directionrelative to the rotor part 152, outside the chamber 12 (that is, outsidethe internal space 120). In this preferred embodiment, the stator part151 is fixed to the base portion 213 and positioned below the liquidreceiving part 16. The stator part 151 includes a plurality of coilswhich are arranged in a circumferential direction about the central axisJ1.

By supplying current to the stator part 151, a rotating force isgenerated about the central axis J1 between the stator part 151 and therotor part 152. The rotor part 152 thereby rotates horizontally aboutthe central axis J1. By magnetic force exerted between the stator part151 and the rotor part 152, the rotor part 152 floats in the chamber 12,not being in direct or indirect contact with the chamber 12, and rotatestogether with the substrate 9 and the substrate holding part 14 aboutthe central axis J1.

The liquid receiving part 16 includes a first cup part 161, a first cupup-and-down moving mechanism 162, a second cup part 163, and a secondcup up-and-down moving mechanism 164. As discussed earlier, part of themember forming the chamber sidewall 22 is included in the liquidreceiving part 16. The second cup part 163 has an annular shape aboutthe central axis J1 and is positioned on an outer side in the radialdirection relative to the chamber sidewall 22. The first cup part 161also has an annular shape and is positioned on an outer side in theradial direction relative to the second cup part 163. The first cupup-and-down moving mechanism 162 moves the first cup part 161 up anddown, and the second cup up-and-down moving mechanism 164 moves thesecond cup part 163 up and down.

A lower portion of an inner peripheral portion of the second cup part163 is positioned in an annular second recessed portion 166 positionedon an outer side relative to the chamber sidewall 22. A lower portion ofthe first cup part 161 is positioned in an annular first recessedportion 165 positioned on an outer side relative to the second recessedportion 166. The members which form the first recessed portion 165 andthe second recessed portion 166 are continuous with the member whichforms the chamber sidewall 22.

At a center of the chamber cover 122, an upper nozzle 181 is fixed. Theupper nozzle 181 is opposed to the opening at the center of the topplate 123. At a center of the center portion 211 of the chamber bottom21, a lower nozzle 182 is attached. A bottom portion of the firstrecessed portion 165 is connected to a first discharge path 191. Abottom portion of the second recessed portion 166 is connected to asecond discharge path 192. A bottom portion of a recessed portionbetween the inner wall portion 212 and the chamber sidewall 22 isconnected to a third discharge path 193. The positions where the uppernozzle 181 and the lower nozzle 182 are attached are not necessarilylimited to the center portions, but the upper nozzle 181 and the lowernozzle 182 may be attached to, for example, positions opposed to aperipheral portion of the substrate 9.

The cover 17 covers the chamber 12 from the upper and side directionsthereof. At an upper portion of the cover 17, provided is a multiplehole part 171. Since air flows out from many holes formed in themultiple hole part 171, downflow occurs in the cover 17. It is therebypossible to prevent particles from rising from the liquid receiving part16 and the chamber bottom 21 to the substrate 9.

FIG. 2 is a block diagram showing a processing liquid supply part 18 anda liquid collecting part 19 included in the substrate processingapparatus 1. The processing liquid supply part 18 includes a firstprocessing liquid supply part 183, a second processing liquid supplypart 184, and a third processing liquid supply part 185 besides theupper nozzle 181 and the lower nozzle 182. The first processing liquidsupply part 183, the second processing liquid supply part 184, and thethird processing liquid supply part 185 are connected to the uppernozzle 181 through valves, respectively. The lower nozzle 182 isconnected to the first processing liquid supply part 183 and the secondprocessing liquid supply part 184 through valves, respectively. Theupper nozzle 181 is also connected to a gas supply part 186. The uppernozzle 181 has a liquid ejection port at its center and also has a gasejection port around the liquid ejection port. Therefore, more exactly,part of the upper nozzle 181 serves as a gas supply part for supplyinggas onto the substrate 9 in a broad sense. The lower nozzle 182 has aliquid ejection port at its center.

To the chamber 12, connected is a pressurizing part 187 for increasingpressure in the internal space 120 of the chamber 12 while the chamber12 is sealed. By the pressurizing part 187, the internal space 120 isbrought into a pressurized atmosphere where the pressure is higher thanatmospheric pressure. The gas supply part 186 may serve also as thepressurizing part. When pressurization is not needed, the pressurizingpart 187 may be omitted.

The first discharge path 191 which is connected to the first recessedportion 165 of the liquid receiving part 16 is connected to a wasteliquid path. The second discharge path 192 which is connected to thesecond recessed portion 166 is connected to a first collecting part 194.The third discharge path 193 which is connected to the chamber bottom 21is connected to a second collecting part 195. The first collecting part194 and the second collecting part 195 are connected to a pressurereducing part 196. By driving the pressure reducing part 196, theprocessing liquid is collected in the first collecting part 194 and thesecond collecting part 195. While the chamber 12 is sealed, the pressurereducing part 196 reduces the pressure in the internal space 120 and theinternal space 120 is thereby bought into a reduced pressure atmospherewhere the pressure is lower than atmospheric pressure. The firstcollecting part 194 and the second collecting part 195 are alsoconnected to the waste liquid path, and the liquid can be discarded fromthe second discharge path 192 and the third discharge path 193.

The first processing liquid supply part 183, the second processingliquid supply part 184, the third processing liquid supply part 185, thegas supply part 186, the pressurizing part 187, the first collectingpart 194, the second collecting part 195, the pressure reducing part196, and the valves are controlled by a control part 10. The coverup-and-down moving mechanism 131, the substrate holding part 14, thesubstrate rotating mechanism 15, the first cup up-and-down movingmechanism 162, and the second cup up-and-down moving mechanism 164 arealso controlled by the control part 10.

In this preferred embodiment, a first processing liquid supplied fromthe first processing liquid supply part 183 is an etching solution suchas hydrofluoric acid, a tetramethylammonium hydroxide solution, or thelike. A second processing liquid supplied from the second processingliquid supply part 184 is deionized water (DIW). A third processingliquid supplied from the third processing liquid supply part 185 isisopropyl alcohol (IPA). Further, the gas supply part 186 suppliesnitrogen gas (N₂) to the inside of the chamber 12.

FIG. 3 is an enlarged view showing the vicinity of the liquid receivingpart 16. At a lower portion of the outer edge of the chamber cover 122,provided are two annular lip seals 231 and 232. The lip seal 231 ispositioned above an upper end portion of the second cup part 163. Thelip seal 232 is positioned above an upper end portion of the chambersidewall 22. When the chamber cover 122 moves down and the second cuppart 163 moves up, the lip seal 231 comes into contact with the upperend portion of the second cup part 163. When the chamber cover 122 movesdown to the chamber sidewall 22, the lip seal 232 comes into contactwith the upper end portion of the chamber sidewall 22.

At a lower portion of the outer edge of the chamber cover 122 which isan upper portion of the chamber 12, provided is a recessed portion 233which is recessed upward and inward in the radial direction along theentire circumference of the chamber cover 122. When the chamber cover122 moves down and the first cup part 161 moves up, the upper endportion of the first cup part 161 comes into contact with the recessedportion 233 with respect to the vertical direction. The upper endportion of the first cup part 161 may only come close to the recessedportion 233. When the second cup part 163 moves down, the upper portionof the chamber sidewall 22 comes into contact with the upper end portionof the second cup part 163.

At the lower surface of an outer edge of the top plate 123, a pluralityof first engaging parts 241 are arranged in the circumferentialdirection. On the upper surface of the substrate holding part 14, aplurality of second engaging parts 242 are arranged in thecircumferential direction. It is preferable that three or more pairs ofthese first and second engaging parts should be provided, and in thispreferred embodiment, provided are four pairs of first and secondengaging parts. At a lower portion of each of the first engaging parts241, provided is a recessed portion which is recessed upward. The secondengaging parts 242 protrude upward from the substrate holding part 14.

When the chamber cover 122 moves down, the second engaging parts 242 getengaged with the recessed portions of the first engaging parts 241,respectively. The top plate 123 thereby gets engaged with the substrateholding part 14 in the circumferential direction about the central axisJ1. When the substrate holding part 14 is rotated by the substraterotating mechanism 15 in this state, the top plate 123 is also rotated.When the top plate 123 moves down, a rotation position of the substrateholding part 14 is controlled so that the first engaging parts 241 andthe second engaging parts 242 may be engaged with each other.

Next, with reference to FIG. 4, discussion will be made on an operationflow for processing the substrate 9 in the substrate processingapparatus 1 under the control of the control part 10. The operationshown in FIG. 4 is only one example, and various processings may beperformed in various orders in the substrate processing apparatus 1. Inthe substrate processing apparatus 1, first, the substrate 9 istransferred and held by the substrate holding part 14 while the chambercover 122 is positioned high as shown in FIG. 1 (Step S11). Then, thechamber cover 122 moves down, and the top plate 123 gets engaged withthe substrate holding part 14 as shown in FIG. 5. The chamber cover 122is apart from the chamber sidewall 22, and an annular opening 81 isformed between the chamber cover 122 and the chamber sidewall 22 aroundthe substrate 9 (that is, on an outer side in the radial directionrelative to the substrate 9).

The second cup part 163 moves up and gets positioned on an outer side inthe radial direction relative to the annular opening 81. Thus, thesecond cup up-and-down moving mechanism 164 moves the second cup part163 between the a position on the outer side relative to the annularopening 81 in the radial direction and another position lower theposition. Then, the upper end portion of the second cup part 163 comesinto contact with the lip seal 231. Since a sealed space is therebyformed around the substrate 9 in the chamber 12, it is possible toprevent particles from entering the second cup part 163 even if theparticles drop from above. Further, the upper end portion of the firstcup part 161 also comes into contact with the chamber cover 122, and itis thereby possible to prevent particles from entering the first cuppart 161. Hereinafter, a state of the chamber 12 in which the annularopening 81 is formed will be referred to as a “semiopen state”. Thestate shown in FIG. 1 will be referred to as an “open state”.

Next, the substrate rotating mechanism 15 starts high-speed rotation ofthe substrate holding part 14 and the substrate 9. Further, thesubstrate 9 is heated by a not-shown heater. Then, the first processingliquid from the first processing liquid supply part 183 (see FIG. 2) issupplied onto a center portion of the upper surface 91 of the substrate9 from the upper nozzle 181. The first processing liquid is spreadtoward the outer peripheral portion of the substrate 9 by the rotationof the substrate 9, and the entire upper surface 91 is coated with thefirst processing liquid (Step S12).

The first processing liquid is also supplied onto a center portion ofthe lower surface 92 of the substrate 9 from the lower nozzle 182 and isspread toward the outer peripheral portion of the substrate 9 by therotation of the substrate 9. The first processing liquid spattering fromthe upper surface 91 and the lower surface 92 of the substrate 9 isreceived by the second cup part 163 through the annular opening 81 andcollected by the second collecting part 195. If the collected firstprocessing liquid can be recycled, the first processing liquid isrecycled after removing impurities and the like therefrom through afilter or the like. The outer edge of the top plate 123 is slightlysloped downward as it goes outward in the radial direction. Since theprocessing liquid is guided by the outer edge of the top plate 123, theprocessing liquid can be appropriately received by the liquid receivingpart 16 through the annular opening 81.

After the etching process using the first processing liquid is finished,the supply of the first processing liquid is stopped, and then the uppernozzle 181 ejects nitrogen gas and the first processing liquid isremoved from the substrate 9 by the rotation of the substrate 9. Sincethe top plate 123 is rotated together with the substrate holding part14, almost no first processing liquid is left on the lower surface ofthe top plate 123 and no first processing liquid drops from the topplate 123.

Next, while the chamber 12 remains in the semiopen state, the second cuppart 163 moves down, and the first cup part 161 gets positioned on theouter side relative to the annular opening 81 in the radial direction asshown in FIG. 6. In other words, the second cup up-and-down movingmechanism 164 switches between the state in which the second cup part163 receives the processing liquid from the substrate 9 and the state inwhich the first cup part 161 receives the processing liquid from thesubstrate 9. The upper end portion of the second cup part 163 comes intocontact with the upper portion of the chamber sidewall 22, and theinside of the chamber 12 is separated from the space inside the secondcup part 163. The upper end portion of the first cup part 161 is incontact with the chamber cover 122.

While the top plate 123 is engaged with the substrate holding part 14,the upper nozzle 181 positioned at the center of the top plate 123continuously ejects the second processing liquid which is deionizedwater and the second processing liquid is thereby supplied onto thecenter portion of the upper surface 91 of the substrate 9 being rotated.By the rotation of the substrate 9, the second processing liquid isspread toward the outer peripheral portion of the substrate 9 andspattered outside from the outer peripheral edge of the substrate 9. Thesecond processing liquid is also supplied onto the center portion of thelower surface 92 of the substrate 9 from the lower nozzle 182 and spreadtoward the outer peripheral portion of the substrate 9 by the rotationof the substrate 9. The used water which is the second processing liquidspattering from the substrate 9 is received by the second cup part 163and discarded (Step S13). In the process of rinsing the substrate 9 byusing the second processing liquid, the supply of the second processingliquid onto the lower surface 92 is stopped at some midpoint and therotation speed of the substrate 9 decreases. The clearance between thetop plate 123 and the substrate 9 is thereby filled with the secondprocessing liquid. In other words, the deionized water paddles on thesubstrate 9.

Next, the supply of the second processing liquid is stopped, and thethird processing liquid which is isopropyl alcohol (IPA) is suppliedonto the upper surface 91 of the substrate 9 only from the upper nozzle181. The clearance between the top plate 123 and the substrate 9 isthereby filled with the third processing liquid, and then the supply ofthe third processing liquid is stopped. The deionized water is therebyreplaced with the isopropyl alcohol (IPA) on the substrate 9 (Step S14).After that, as shown in FIG. 7, the chamber cover 122 and the first cuppart 161 move down. The lip seal 232 of the chamber cover 122 comes intocontact with the upper portion of the chamber sidewall 22. The sealedinternal space 120 is thereby formed in the chamber 12. Since the topplate 123 is movable in the vertical direction relative to the chambercover 122, the top plate 123 remains engaged with the substrate holdingpart 14. While the chamber 12 is sealed, the substrate 9 and thesubstrate holding part 14 are opposed directly to the sidewall of thechamber 12 and there is no other liquid receiving part therebetween. Thechamber 12 may be sealed before Step S14. Though the processing isperformed in a liquid-tight state where the clearance between the topplate 123 and the substrate 9 is filled with the processing liquid inSteps S13 and S14 in this preferred embodiment, there may be a casewhere the top plate 123 is positioned higher than that in this case andthe processing is performed in a state where the clearance between thetop plate 123 and the substrate 9 is not filled with the processingliquid.

By rotating the substrate 9 at high speed in the sealed space andejecting nitrogen gas (N₂) from the upper nozzle 181, the thirdprocessing liquid is removed from the substrate 9. The third processingliquid spattering from the substrate 9 is received by the chambersidewall 22 and collected by the second collecting part 195. At thattime, the pressure reducing part 196 reduces pressure in the internalspace 120 of the chamber 12, to thereby promote drying of the substrate9 (Step S15). If the third processing liquid collected by the secondcollecting part 195 is recycled, impurities and the like are removedfrom the third processing liquid. After the drying of the substrate 9 isfinished, the rotation of the substrate 9 is stopped.

Further, the substrate 9 may be heated while being dried. Beforereducing the pressure, the pressurizing part 187 may increase thepressure in the internal space 120. This makes it possible for the thirdprocessing liquid to easily enter the inside of the pattern on thesubstrate 9.

After that, the pressure in the internal space 120 is increased back tothe normal pressure, and the chamber cover 122 moves up as shown inFIG. 1. Since the top plate 123 is rotated together with the substrateholding part 14, almost no liquid is left on the lower surface of thetop plate 123 and no liquid drops from the top plate 123 while thechamber cover 122 moves up. The substrate 9 is unloaded by an externaltransfer mechanism (Step S16). When the chamber cover 122 moves up, aplurality of projections 244 provided on the chamber cover 122 getengaged with an annular groove portion 243 provided in a lower surfaceof an upper portion of the top plate 123, and the top plate 123 isthereby aligned with respect to the chamber cover 122. As a structurefor alignment, any other structure may be used.

As shown in FIG. 8, a scan nozzle 188 may be additionally provided inthe processing liquid supply part 18 of the substrate processingapparatus 1. In the case where the scan nozzle 188 is used, the chamber12 is brought into the open state where the chamber cover 122 ispositioned above and largely apart from the chamber body 121 and the topplate 123 is apart from the substrate holding part 14. Therefore, thetop plate 123 is not rotated. Thus, when a distance between the chambercover 122 and the other portion of the chamber 12 is a first distance,the top plate 123 is engaged with the substrate holding part 14 in thecircumferential direction, and when the distance is a second distancelarger than the first distance, the top plate 123 is apart from thesubstrate holding part 14. Between the chamber cover 122 and the chamberbody 121, the scan nozzle 188 is inserted from the outside of thechamber 12 and moved to above the substrate 9. The scan nozzle 188 is atwo-fluid nozzle used, for example, for cleaning with deionized waterafter an SC1 process. The scan nozzle 188 may be any type of nozzleother than the two-fluid nozzle. The scan nozzle 188 supplies theprocessing liquid onto the upper surface 91 of the substrate 9 whilerepeating a reciprocating motion in the horizontal direction. The scannozzle 188 may be any other type of nozzle for other processings. Whenthe two-fluid nozzle is used as the scan nozzle 188, it is preferablethat a not-shown gas exhaust facility should be connected to the insideof the cover 17 to sufficiently discharge the generated processingliquid mist.

When the processing liquid from the scan nozzle 188 is discarded, thefirst cup part 161 moves up and the second cup part 163 moves down. Theouter edge of the substrate 9 is opposed to the first cup part 161 inthe radial direction. When the processing liquid is collected andrecycled, both the first cup part 161 and the second cup part 163 moveup. The outer edge of the substrate 9 is opposed to the second cup part163 in the radial direction.

Thus, the substrate processing apparatus 1 can perform both a processingin a state where the chamber 12 is sealed (hereinafter, the processingwill be referred to as a “sealed-state processing”) and a processing inanother state where the chamber 12 is in the semiopen state or the openstate (hereinafter, the processing will be referred to as an “open-stateprocessing”). In other words, more various processings than in theconventional cases can be performed by one apparatus. Especially, thesealed-state processing and the open-state processing, which involvepressure reduction and/or pressurization, can be continuously performed.In a case where the scan nozzle 188 is provided, a processing using thescan nozzle 188 can be also performed continuously with the sealed-stateprocessing. Further, since the liquid receiving part 16 is disposedoutside the chamber 12, it is possible to collect the processing liquidwith high efficiency and reduce the size and volumetric capacity of thechamber 12. This makes it possible to easily and efficiently performprocessings involving pressurization and/or pressure reduction andreduce the amount of gas to be filled in the chamber 12. Furthermore,since the surroundings of the substrate 9 in the chamber 12 can bealmost sealed even when the chamber 12 is in the semiopen state, it ispossible to prevent an undesirable atmosphere inside the cover 17 fromflowing in the inside of the chamber 12. In the above-discussed StepS12, for example, by supplying the first processing liquid onto thesubstrate 9 while ejecting nitrogen gas (N₂) from the upper nozzle 181in the semiopen state shown in FIG. 5, the surroundings of the substrate9 in the chamber 12 is brought into a nitrogen atmosphere, withundesirable oxygen and/or processing liquid atmosphere being removed,and the processings can be performed in a low oxygen atmosphere. Such asa processing performed in the low oxygen atmosphere is useful, forexample, in a polymer removal process or the like for a substrate onwhich copper wiring is formed, to prevent oxidation of the copperwiring.

Since the first cup part 161 and the second cup part 163 are provided inthe liquid receiving part 16, a plurality of kinds of processing liquidscan be collected separately. The processing liquid used in thesealed-state processing and that used in the open-state processing canbe also collected separately. It is thereby possible to increase thecollection efficiency of the processing liquids and prolong thelifetimes of the processing liquids as compared with the case where aplurality of kinds of processing liquids are received only by thechamber inner wall and collected separately by using a multiple valve.Further, it is possible to easily prevent generation of particles, heatgeneration, smoke generation, or the like caused by mixture of differentkinds of processing liquids.

In the chamber 12, deionized water may be supplied onto the substrate 9in a sealed state. The used water or isopropyl alcohol (IPA) spatteringfrom the substrate 9 is received by the chamber 12 in the sealed state,and if the processing liquid is a liquid chemical which causes achemical reaction on the substrate 9, the processing liquid is receivedby the cup part in the semiopen state. This reduces contamination insidethe chamber 12. Thus, since the inner wall of the chamber 12 and the cupparts each serve as a liquid receiving part dedicated to a specificprocessing liquid, it is possible to collect the processing liquid withhigh purity and low loss.

Further, since all the cup parts can be moved up and down, it ispossible to easily handle the substrate 9 in loading.

In the substrate processing apparatus 1, by using the top plate 123, itis possible to prevent the liquid deposited on the inside of the chamberfrom dropping onto the substrate with a simple structure. In performinga processing, since the top plate 123 gets close to the substrate 9while being engaged with the substrate holding part 14, it is possibleto reduce the amount of processing liquid required to coat the uppersurface 91 of the substrate 9. It is also possible to reduce the amountof gas to be supplied between the top plate 123 and the substrate 9.

Since the top plate 123 can be moved in the vertical direction relativeto the chamber cover 122, it is possible to rotate the top plate 123together with the substrate holding part 14 both in the sealed state andin the semiopen state. Further, by moving the chamber cover 122 upslightly from the semiopen state, the engagement between the top plate123 and the substrate holding part 14 can be released. It is alsopossible to eject the processing liquid from the upper nozzle 181 toperform a processing in such an open state.

In the substrate processing apparatus 1, the rotor part 152 is disposedin the internal space 120 which can be sealed and the stator part 151 isdisposed outside the chamber 12. It is thereby possible to easily formthe internal space 120 having excellent hermeticity. As a result, it ispossible to easily achieve a single-substrate processing on thesubstrate 9 in the sealed internal space 120. Further, it is possible tomore easily provide various structures such as the lower nozzle 182 orthe like on the chamber bottom 21, as compared with in an apparatus inwhich a motor is provided below the chamber bottom.

In the substrate rotating mechanism 15, the rotor part 152 rotates,being in a floating state in the internal space 120. For this reason, itis not necessary to provide any structure for supporting the rotor part152 in the internal space 120, and it is thereby possible to reduce thesize and simplify the configuration of the substrate processingapparatus 1. Since no dust or the like is generated due to frictionbetween the rotor part 152 and the supporting structure, it is possibleto improve cleanability of the internal space 120. Furthermore, since nofriction resistance caused by the supporting structure is exerted on therotor part 152, it is possible to easily rotate the rotor part 152 athigh speed.

FIGS. 9 to 13 are cross sections each showing a substrate processingapparatus 1 a in accordance with the second preferred embodiment of thepresent invention. FIG. 9 shows a state of the apparatus in loading orunloading the substrate 9. FIG. 10 shows a state in which the processingliquid spattering from the substrate 9 is received by the second cuppart 163 in the semiopen state. FIG. 11 shows a state in which theprocessing liquid spattering from the substrate 9 is received by thefirst cup part 161 in the semiopen state. FIG. 12 shows a state in whicha sealed-state processing is performed (a processing is performed in thesealed space). FIG. 13 shows a state in which a processing is performedby using the scan nozzle 188.

As shown in FIG. 9, in the substrate processing apparatus 1 a, the cover17 is provided with a partition plate 172. The partition plate 172extends outward in the radial direction from the chamber 12. A portionwhich is continuous inward in the radial direction from the partitionplate 172, i.e., an inner peripheral portion of a member including thepartition plate 172 protrudes downward, which constitutes part of thechamber 12. Hereinafter, this portion will be referred to as a “chamberfixed part 124”. In other words, the partition plate 172 extends outwardfrom the chamber fixed part 124. The partition plate 172 is positionedabove the first cup part 161 and the second cup part 163. With thepartition plate 172, it is possible to prevent airflow from flowing intothe chamber 12 in the semiopen state.

A portion 125 which includes the lower portion of the chamber 12 and ispositioned lower than the chamber fixed part 124 is moved up and down bythe chamber up-and-down moving mechanism 132. As discussed later, sincethe semiopen state and the sealed state are achieved by the chamberup-and-down moving mechanism 132, the chamber up-and-down movingmechanism 132 serves as a chamber opening and closing mechanism in thispreferred embodiment. Hereinafter, the portion 125 will be referred toas a “chamber movable part”. The chamber cover 122 is positioned abovethe chamber fixed part 124. Further, like in the first preferredembodiment, the cover up-and-down moving mechanism 131 may be alsoregarded as the chamber opening and closing mechanism.

The position of the first cup part 161 is fixed in a state where theupper end portion thereof is close to the partition plate 172. Thesecond cup part 163 is moved up and down by the second cup up-and-downmoving mechanism 164. A substrate rotating mechanism 15 a is a shaftrotation type motor, and the substrate holding part 14 has a plate-likeshape. A rotation shaft of the substrate rotating mechanism 15 a isconnected to a center of the substrate holding part 14. The lower nozzle182 provided at an upper end of the substrate rotating mechanism 15 a.Other constituent elements are almost identical to those of the firstpreferred embodiment. Exemplary operation is the same as that of thefirst preferred embodiment.

At the outer edge of the chamber cover 122, provided is an annular lipseal 234. As shown in FIG. 10, in the semiopen state, the lip seal 234of the chamber cover 122 is in contact with the partition plate 172. Onthe other hand, the chamber movable part 125 is apart from the partitionplate 172. The annular opening 81 is thereby formed between the chambermovable part 125 and the partition plate 172. The annular opening 81 ispositioned around the substrate 9. In FIG. 10, the second cup part 163is positioned on an outer side relative to the annular opening 81 in theradial direction. The processing liquid spattering from the substrate 9being rotated is collected by the first collecting part 194 (see FIG. 2)through the second cup part 163, like in the first preferred embodiment.

In FIG. 11, the chamber 12 is in the semiopen state, and the second cuppart 163 is moved down from the state shown in FIG. 10 and the first cuppart 161 is thereby positioned on an outer side relative to the annularopening 81 in the radial direction. Thus, like in the first preferredembodiment, the second cup up-and-down moving mechanism 164 moves thesecond cup part 163 between the position on the outer side relative tothe annular opening 81 in the radial direction and another positionlower than the position, to thereby switch between the state in whichthe second cup part 163 receives the processing liquid from thesubstrate 9 and the state in which the first cup part 161 receives theprocessing liquid from the substrate 9. The processing liquid spatteringfrom the substrate 9 is received by the first cup part 161 anddiscarded.

In FIG. 12, the chamber movable part 125 is moved up and comes intocontact with the partition plate 172. The sealed internal space 120 isthereby formed in the chamber 12. The processing liquid spattering fromthe substrate 9 is received by a chamber sidewall 22 a which is an outerperipheral portion of the chamber movable part 125 and collected by thesecond collecting part 195.

As shown in FIG. 13, in the case where the scan nozzle 188 is used, thechamber cover 122 gets apart from the partition plate 172, and then thescan nozzle 188 is inserted between the chamber cover 122 and thepartition plate 172. The chamber movable part 125 also gets apart fromthe partition plate 172, to thereby form the annular opening 81. Theprocessing liquid spattering from the substrate 9 being rotated isreceived by the cup part positioned on the outer side relative to theannular opening 81 in the radial direction. In the case of FIG. 13, thefirst cup part 161 is positioned on the outer side relative to theannular opening 81 in the radial direction. As a matter of course, thesecond cup part 163 may be positioned on the outer side relative to theannular opening 81 in the radial direction.

Like in the first preferred embodiment, in the semiopen state and thesealed state, the top plate 123 is engaged with the substrate holdingpart 14 in the circumferential direction and rotated together with thesubstrate holding part 14. This reduces the amount of processing liquidand processing gas to be used. In the case of FIG. 13, the top plate 123is not rotated.

FIG. 14 is a cross section showing a substrate processing apparatus 1 bin accordance with the third preferred embodiment of the presentinvention. The substrate processing apparatus 1 b is a single-substrateprocessing apparatus which supplies a processing liquid onto asemiconductor substrate 9 (hereinafter, referred to simply as a“substrate 9”) having a substantially disk-like shape and therebyprocesses substrates 9 one by one. In FIG. 14, hatching is omitted inthe cross section showing part of a configuration of the substrateprocessing apparatus 1 b (the same applies to other cross sections).

The substrate processing apparatus 1 b includes the chamber 12, the topplate 123, a top plate moving mechanism 126, the chamber opening andclosing mechanism 131, the substrate holding part 14, the substraterotating mechanism 15, the liquid receiving part 16, and the cover 17.

The chamber 12 includes the chamber body 121 and the chamber cover 122.The chamber body 121 and the chamber cover 122 are each formed of anon-magnetic material. The chamber body 121 includes the chamber bottom21 and the chamber sidewall 22. The chamber bottom 21 includes thesubstantially disk-like center portion 211, the cylindrical inner wallportion 212 extending downward from the outer edge of the center portion211, and the base portion 213 extending outward in the radial directionfrom the inner wall portion 212. The chamber sidewall 22 has an annularshape about the central axis J1 oriented in the vertical direction andprotrudes upward from a center portion of the base portion 213 in theradial direction. The member which forms the chamber sidewall 22 servesas part of the liquid receiving part 16 as discussed later. In thefollowing discussion, a space surrounded by the chamber sidewall 22, theinner wall portion 212, and the base portion 213 will be referred to asa lower annular space 217. When the substrate 9 is supported by asubstrate supporting part 141 (described later) of the substrate holdingpart 14, the lower surface 92 of the substrate 9 is opposed to the uppersurface of the center portion 211.

The chamber cover 122 has a substantially disk-like shape perpendicularto the central axis J1 and includes the upper portion of the chamber 12.The chamber cover 122 closes the upper opening of the chamber body 121.FIG. 14 shows a state in which the chamber cover 122 is apart from thechamber body 121. When the chamber cover 122 closes the upper opening ofthe chamber body 121, the outer edge of the chamber cover 122 is incontact with the upper portion of the chamber sidewall 22. At the centerof the chamber cover 122, provided is an accommodating part 221 having asubstantially covered cylindrical shape, which is recessed upward.

The chamber opening and closing mechanism 131 moves the chamber cover122 which is a movable part of the chamber 12 in the vertical directionrelative to the chamber body 121 which is the other portion of thechamber 12. The chamber opening and closing mechanism 131 is a coverup-and-down moving mechanism for moving the chamber cover 122 up anddown. When the chamber cover 122 is moved in the vertical direction bythe chamber opening and closing mechanism 131, the top plate 123 is alsomoved in the vertical direction together with the chamber cover 122. Bybringing the chamber cover 122 into contact with the chamber body 121 toclose the upper opening and pressing the chamber cover 122 toward thechamber body 121, the sealed internal space 120 (see FIGS. 20 and 21) isformed in the chamber 12.

The substrate holding part 14 is disposed in the chamber 12 and holdsthe substrate 9 horizontally. In other words, the substrate 9 is held bythe substrate holding part 14 with the upper surface 91 thereof directedupward, being perpendicular to the central axis J1. The substrateholding part 14 includes the above-mentioned substrate supporting part141 for supporting the outer edge of the substrate 9 from below and asubstrate retaining part 142 for retaining the outer edge of thesubstrate 9 supported by the substrate supporting part 141 from above.The substrate supporting part 141 includes a supporting-part base 413having a substantially annular disk-like shape about the central axis J1and a plurality of first contact parts 411 fixed on an upper surface ofthe supporting-part base 413. The substrate retaining part 142 includesa plurality of second contact parts 421 fixed on the lower surface ofthe top plate 123. Respective positions of the plurality of secondcontact parts 421 in the circumferential direction are actuallydifferent from respective positions of the plurality of first contactparts 411 in the circumferential direction.

The top plate 123 has a substantially disk-like shape perpendicular tothe central axis J1. The top plate 123 is disposed below the chambercover 122 and above the substrate supporting part 141. The top plate 123has an opening at its center. When the substrate 9 is supported by thesubstrate supporting part 141, the upper surface 91 of the substrate 9is opposed to the lower surface of the top plate 123, which isperpendicular to the central axis J1. A diameter of the top plate 123 islarger than that of the substrate 9, and the outer peripheral edge ofthe top plate 123 is positioned on an outer side relative to the outerperipheral edge of the substrate 9 in the radial direction along theentire circumference thereof.

On the lower surface of the chamber cover 122, a plurality of plateholding parts 222 for holding the top plate 123 are arranged in thecircumferential direction about the central axis J1. On the uppersurface of the top plate 123, a plurality of protruding portions 236 arearranged in the circumferential direction at positions opposed to theplurality of plate holding parts 222, respectively. By holding theplurality of protruding portions 236 by the plurality of plate holdingparts 222, the top plate 123 is so supported by the chamber cover 122 asto be suspended from the chamber cover 122.

To the upper surface of the top plate 123, a top plate shaft 235 isfixed. The top plate 123 and the top plate shaft 235 are each formed ofa non-magnetic material. The top plate shaft 235 has a substantiallycylindrical shape about the central axis J1. At least part of the topplate shaft 235 (most portion except a lower end portion thereof in thispreferred embodiment) is accommodated in then accommodating part 221 ofthe chamber cover 122. The top plate moving mechanism 126 is disposed atthe top plate shaft 235 and the chamber cover 122. The top plate movingmechanism 126 moves the top plate 123 in the vertical direction relativeto the chamber cover 122 by using magnetic force.

FIG. 15 is an enlarged cross section showing the vicinity of the topplate shaft 235. As shown in FIG. 15, the top plate moving mechanism 126includes a first magnet 261, a second magnet 262, and a magnet movingmechanism 263. The first magnet 261 is disposed in the circumferentialdirection along an outer peripheral surface of the top plate shaft 235inside the top plate shaft 235. The first magnet 261 is fixed to the topplate shaft 235. The second magnet 262 is disposed around theaccommodating part 221 in the circumferential direction in an annularhole 264 formed around the accommodating part 221 in the chamber cover122. In this preferred embodiment, the first magnet 261 and the secondmagnet 262 each have a substantially annular shape about the centralaxis J1. An upper portion of the first magnet 261 is the north pole anda lower portion thereof is the south pole. An upper portion of thesecond magnet 262 is the south pole and a lower portion thereof is thenorth pole. A height of the annular hole 264 in the vertical directionis higher than that of the second magnet 262 in the vertical direction.The second magnet 262 is moved in the vertical direction in the annularhole 264 by the magnet moving mechanism 263.

The substrate rotating mechanism 15 shown in FIG. 14 is a so-calledhollow motor. The substrate rotating mechanism 15 includes the statorpart 151 having an annular shape about the central axis J1 and the rotorpart 152 having an annular shape. The rotor part 152 includes apermanent magnet having a substantially annular shape. A surface of thepermanent magnet is molded by PTFE (polytetrafluoroethylene) resin. Therotor part 152 is disposed in the lower annular space 217 in theinternal space 120 of the chamber 12. To an upper portion of the rotorpart 152, the supporting-part base 413 of the substrate supporting part141 is attached with a connecting member interposed therebetween. Thesupporting-part base 413 is disposed above the rotor part 152.

The stator part 151 is disposed around the rotor part 152 outside thechamber 12 (i.e., outside the internal space 120) i.e., on the outerside in the radial direction relative to the rotor part 152. In thispreferred embodiment, the stator part 151 is fixed to the base portion213 and positioned below the liquid receiving part 16. The stator part151 includes a plurality of coils which are arranged in thecircumferential direction about the central axis J1.

By supplying current to the stator part 151, a rotating force isgenerated about the central axis J1 between the stator part 151 and therotor part 152. The rotor part 152 thereby rotates horizontally aboutthe central axis J1. By the magnetic force exerted between the statorpart 151 and the rotor part 152, the rotor part 152 floats in thechamber 12, not being in direct or indirect contact with the chamber 12,and rotates together with the substrate 9 and the substrate holding part14 about the central axis J1.

The liquid receiving part 16 includes a cup part 161 a and a cup movingmechanism 162 a. As discussed earlier, part of the member forming thechamber sidewall 22 is included in the liquid receiving part 16. The cuppart 161 a has an annular shape about the central axis J1 and ispositioned on an outer side in the radial direction relative to thechamber sidewall 22. The cup moving mechanism 162 a moves the cup part161 a in the vertical direction.

A lower portion of the cup part 161 a is positioned in an annular liquidreceiving recessed portion 165 a positioned outside the chamber sidewall22. At an upper end portion of a substantially cylindrical outer wallportion 168 surrounding an outer periphery of the liquid receivingrecessed portion 165 a, fixed is an outer seal portion 169 having asubstantially annular disk-like shape about the central axis J1. Theouter seal portion 169 extends inward in the radial direction from theupper end portion of the outer wall portion 168 and covers an outerperipheral portion of an upper opening of the liquid receiving recessedportion 165 a along the entire circumference thereof.

At the center of the chamber cover 122, the upper nozzle 181 is fixed.The upper nozzle 181 is inserted into a through hole formed at a centerof the top plate shaft 235 and inserted into the opening at the centerof the top plate 123. At a center of the center portion 211 of thechamber bottom 21, the lower nozzle 182 is attached. A bottom portion ofthe liquid receiving recessed portion 165 a is connected to the firstdischarge path 191. A bottom portion of the lower annular space 217between the inner wall portion 212 and the chamber sidewall 22 isconnected to the second discharge path 192. The positions where theupper nozzle 181 and the lower nozzle 182 are attached are notnecessarily limited to the center portions, but the upper nozzle 181 andthe lower nozzle 182 may be attached to, for example, positions opposedto a peripheral portion of the substrate 9.

The cover 17 covers the chamber 12 from the upper and side directionsthereof. At the upper portion of the cover 17, provided is a multiplehole part 171. Since air flows out from many holes formed in themultiple hole part 171, downflow occurs in the cover 17. It is therebypossible to prevent particles from rising from the liquid receiving part16 and the chamber bottom 21 to the substrate 9.

FIG. 16 is a block diagram showing the processing liquid supply part 18and the liquid collecting part 19 included in the substrate processingapparatus 1 b. The processing liquid supply part 18 includes the firstprocessing liquid supply part 183, the second processing liquid supplypart 184, and the third processing liquid supply part 185 besides theupper nozzle 181 and the lower nozzle 182. The first processing liquidsupply part 183, the second processing liquid supply part 184, and thethird processing liquid supply part 185 are connected to the uppernozzle 181 through valves, respectively. The lower nozzle 182 isconnected to the first processing liquid supply part 183 and the secondprocessing liquid supply part 184 through valves, respectively. Theupper nozzle 181 is also connected to the gas supply part 186. The uppernozzle 181 has the liquid ejection port at its center and also has thegas ejection port around the liquid ejection port. Therefore, moreexactly, part of the upper nozzle 181 serves as the gas supply part forsupplying gas onto the substrate 9 in a broad sense. The lower nozzle182 has the liquid ejection port at its center.

To the chamber 12, connected is the pressurizing part 187 for increasingpressure in the internal space 120 of the chamber 12 while the chamber12 is sealed. By the pressurizing part 187, the internal space 120 isbrought into a pressurized atmosphere where the pressure is higher thanatmospheric pressure. The gas supply part 186 may serve also as thepressurizing part. When pressurization is not needed, the pressurizingpart 187 may be omitted.

The first discharge path 191 which is connected to the liquid receivingrecessed portion 165 a of the liquid receiving part 16 is connected tothe first collecting part 194. The second discharge path 192 which isconnected to the chamber bottom 21 is connected to the second collectingpart 195. The first collecting part 194 and the second collecting part195 are connected to the pressure reducing part 196. By driving thepressure reducing part 196, the processing liquid is collected in thefirst collecting part 194 and the second collecting part 195. While thechamber 12 is sealed, the pressure reducing part 196 reduces thepressure in the internal space 120 and the internal space 120 is therebybought into a reduced pressure atmosphere where the pressure is lowerthan atmospheric pressure. The first collecting part 194 and the secondcollecting part 195 are also connected to the waste liquid path, and theliquid can be discarded from the first discharge path 191 and the seconddischarge path 192.

The first processing liquid supply part 183, the second processingliquid supply part 184, the third processing liquid supply part 185, thegas supply part 186, the pressurizing part 187, the first collectingpart 194, the second collecting part 195, the pressure reducing part196, and the valves are controlled by the control part 10. The chamberopening and closing mechanism 131, the substrate holding part 14, thesubstrate rotating mechanism 15, and the cup moving mechanism 162 a (seeFIG. 14) are also controlled by the control part 10.

In this preferred embodiment, the first processing liquid supplied ontothe substrate 9 from the first processing liquid supply part 183 is anetching solution such as hydrofluoric acid, a tetramethylammoniumhydroxide solution, or the like. The second processing liquid suppliedfrom the second processing liquid supply part 184 is deionized water(DIW). The third processing liquid supplied from the third processingliquid supply part 185 is isopropyl alcohol (IPA). Further, the gassupply part 186 supplies nitrogen gas (N₂) to the inside of the chamber12.

FIG. 17 is an enlarged view showing part of the chamber 12 and theliquid receiving part 16. The cup part 161 a includes a sidewall portion611, an upper surface portion 612, and a lower surface portion 613. Thesidewall portion 611 has a substantially cylindrical shape about thecentral axis J1. The upper surface portion 612 has a substantiallyannular disk-like shape about the central axis J1 and extends inward inthe radial direction from an upper end portion of the sidewall portion611. The lower surface portion 613 has a substantially annular disk-likeshape about the central axis J1 and extends outward in the radialdirection from a lower end portion of the sidewall portion 611. Theupper surface portion 612 and the lower surface portion 613 aresubstantially perpendicular to the central axis J1. In a state of FIG.17, almost the entire sidewall portion 611 and the lower surface portion613 of the cup part 161 a are positioned in the liquid receivingrecessed portion 165 a.

At the lower surface of the outer edge of the chamber cover 122,provided are the lip seals 231 and 232. The lip seal 231 is positionedabove the upper end portion of the chamber sidewall 22. The lip seal 232is positioned above an inner edge of the upper surface portion 612 ofthe cup part 161 a. When the chamber cover 122 moves down and the cuppart 161 a moves up, the lip seal 232 comes into contact with the inneredge of the upper surface portion 612 of the cup part 161 a with respectto the vertical direction. When the chamber cover 122 moves down to thechamber sidewall 22, the lip seal 232 comes into contact with the upperend portion of the chamber sidewall 22.

FIG. 18 is a bottom view showing the top plate 123. FIG. 19 is a planview showing the substrate supporting part 141. In FIGS. 18 and 19, thesubstrate 9 is indicated by the two-dot chain line. As shown in FIGS. 17to 19, at the lower surface of the outer edge of the top plate 123, theplurality of first engaging parts 241 are arranged in thecircumferential direction. On the upper surface of the supporting-partbase 413, the plurality of second engaging parts 242 are arranged in thecircumferential direction. It is preferable that three or more pairs ofthese first and second engaging parts should be provided, and in thispreferred embodiment, provided are four pairs of first and secondengaging parts. At the lower portion of each of the first engaging parts241, provided is the recessed portion which is recessed upward. Thesecond engaging parts 242 protrude upward from the supporting-part base413.

As shown in FIG. 20, when the chamber cover 122 moves down to thechamber sidewall 22, the second engaging parts 242 get engaged with therecessed portions of the first engaging parts 241, respectively. The topplate 123 thereby gets engaged with the supporting-part base 413 of thesubstrate supporting part 141 in the circumferential direction about thecentral axis J1. In other words, the first engaging parts 241 and thesecond engaging parts 242 serve as a position regulating member forregulating a position of the top plate 123 relative to the substratesupporting part 141 in a rotation direction (in other words, for fixinga relative position of the top plate 123 in the circumferentialdirection). When the top plate 123 moves down, a rotation position ofthe supporting-part base 413 is controlled by the substrate rotatingmechanism 15 so that the first engaging parts 241 and the secondengaging parts 242 may be engaged with each other. A position of the topplate 123 relative to the substrate supporting part 141 in the verticaldirection is not fixed by the first engaging parts 241 and the secondengaging parts 242.

In a state of FIG. 20, the holding of the top plate 123 by the plateholding part 222 is released, and the top plate 123 is apart from thechamber cover 122 and close to the substrate 9. A position of the topplate 123 in the vertical direction is determined by the magnetic force(attractive force) exerted between the first magnet 261 and the secondmagnet 262 of the top plate moving mechanism 126. Specifically, thefirst magnet 261 and the second magnet 262 are opposed to each other inthe radial direction so that a center portion of the first magnet 261 inthe vertical direction and a center portion of the second magnet 262 inthe vertical direction may be positioned at almost the same position inthe vertical direction. The position of the top plate 123 relative tothe chamber cover 122 in the vertical direction is thereby fixed.Further, since a position of the top plate 123 in the horizontaldirection is determined by the first engaging parts 241 and the secondengaging parts 242, the top plate shaft 235 is not in contact with aninner side surface of the accommodating part 221.

In the following discussion, the position of the top plate 123 shown inFIG. 20 will be referred to as a “first close position”. While the topplate 123 is positioned at the first close position, the substrateretaining part 142 of the substrate holding part 14 is not in contactwith the substrate 9 and does not retain the outer edge of the substrate9. When the substrate supporting part 141 is rotated by the substraterotating mechanism 15 in this state, the top plate 123 is rotatedtogether with the substrate supporting part 141, the substrate 9 heldhorizontally by the substrate supporting part 141, and the substrateretaining part 142. The top plate 123 is an upper rotating member whichrotates together with the substrate supporting part 141.

As shown in FIG. 19, on the upper surface of the supporting-part base413, the plurality of first contact parts 411 of the substratesupporting part 141 are arranged in the circumferential direction. Theplurality of first contact parts 411 are disposed on an inner siderelative to the plurality of second engaging parts 242 in the radialdirection. Further, as shown in FIG. 18, on the lower surface of theouter edge of the top plate 123, the plurality of second contact parts421 of the substrate retaining part 142 are arranged in thecircumferential direction. The plurality of second contact parts 421 aredisposed on an inner side relative to the plurality of first engagingparts 241 in the radial direction. As discussed above, respectivepositions of the plurality of second contact parts 421 in thecircumferential direction are different from respective positions of theplurality of first contact parts 411 in the circumferential direction.In this preferred embodiment, four first contact parts 411 are arrangedat regular angular intervals in the circumferential direction. Further,assuming adjacent two second contact parts 421 as a pair, four pairs ofsecond contact parts 421 are arranged at regular angular intervals inthe circumferential direction.

As shown in FIG. 21, in the top plate moving mechanism 126, when thesecond magnet 262 is moved downward by the magnet moving mechanism 263,the top plate shaft 235 and the top plate 123 are moved downward by themagnetic force (attractive force) exerted between the first magnet 261and the second magnet 262. The top plate 123 thereby gets close to thesubstrate 9. In the following discussion, the position of the top plate123 shown in FIG. 21 will be referred to as a “second close position”.In this preferred embodiment, a distance in the vertical directionbetween the lower surface of the top plate 123 and the upper surface 91of the substrate 9 at the second close position is about 2 mm. Further,a distance in the vertical direction between the lower surface of thetop plate 123 and the upper surface 91 of the substrate 9 at the firstclose position is about 10 mm.

Even when the top plate 123 is positioned at the second close position,the position of the top plate 123 in the circumferential directionrelative to the supporting-part base 413 of the substrate supportingpart 141 is fixed since the first engaging parts 241 and the secondengaging parts 242 are engaged with each other. Further, the top plateshaft 235 is not in contact with the inner side surface of theaccommodating part 221. On the other hand, when the top plate 123 ispositioned at the second close position, the plurality of second contactparts 421 of the substrate retaining part 142 are in contact with theouter edge of the substrate 9, unlike in the state where the top plate123 is positioned at the first close position.

FIG. 22 is an enlarged plan view showing part of the substrate holdingpart 14 which holds the substrate 9. In FIG. 22, the chamber cover 122is not shown. As shown in FIG. 22, two second contact parts 421 of thesubstrate retaining part 142 are provided on both sides of one firstcontact part 411 of the substrate supporting part 141 in thecircumferential direction, adjacently thereto. The first contact part411 and the two second contact parts 421 are arranged, being apart fromone another with a small gap between adjacent two in the circumferentialdirection. The same applies to other sets of one first contact part 411and two second contact parts 421. A distance between each first contactpart 411 and the adjacent second contact part 421 in the circumferentialdirection is smaller than a distance between the second contact part 421and any other first contact part 411 in the circumferential direction.In the outer edge of the substrate 9, a position where the first contactpart 411 is in contact therewith will be referred to as a “first contactposition”, and a position where the second contact part 421 is incontact therewith will be referred to as a “second contact position”.The plurality of second contact positions are different from theplurality of first contact positions with respect to the circumferentialdirection.

FIG. 23 is an enlarged side elevation view showing the vicinity of onefirst contact part 411. The other first contact parts 411 each have thesame structure as that of the first contact part 411 shown in FIG. 23.The plurality of first contact parts 411 each have a first slopedsurface 412 which goes downward as it goes inward in the radialdirection. Each of the first contact parts 411 comes into contact withthe outer edge of the substrate 9 at the first sloped surface 412thereof.

FIG. 24 is an enlarged side elevation view showing the vicinity of onesecond contact part 421. The other second contact parts 421 each havethe same structure as that of the second contact part 421 shown in FIG.24. The plurality of second contact parts 421 each have a second slopedsurface 422 which goes upward as it goes inward in the radial direction.Each of the second contact parts 421 comes into contact with the outeredge of the substrate 9 at the second sloped surface 422 thereof.

In FIG. 23, the second contact part 421 disposed adjacently to the firstcontact part 411 is indicated by the two-dot chain line. In FIG. 24, thefirst contact part 411 disposed adjacently to the second contact part421 is indicated by the two-dot chain line. As shown in FIGS. 23 and 24,an upper end portion of the first contact part 411 is positioned higherthan the upper surface 91 of the substrate 9 and a lower end portion ofthe second contact part 421 is positioned lower than the lower surface92 of the substrate 9. Therefore, in the substrate holding part 14, therespective upper end portions of the plurality of first contact parts411 are positioned higher than the respective lower end portions of theplurality of second contact parts 421.

Next, with reference to FIG. 25, discussion will be made on an operationflow for processing the substrate 9 in the substrate processingapparatus 1 b under the control of the control part 10. The operationshown in FIG. 25 is only one example, and various processings may beperformed in various orders in the substrate processing apparatus 1 b.In the substrate processing apparatus 1 b, first, the substrate 9 istransferred and held by the substrate holding part 14 while the chambercover 122 is positioned high as shown in FIG. 14 (Step S21). Then, thechamber cover 122 moves down, and the position of the top plate 123 inthe circumferential direction relative to the substrate supporting part141 is fixed by the first engaging parts 241 and the second engagingparts 242 as shown in FIG. 26.

Subsequently, as shown in FIG. 27, the holding of the top plate 123 bythe plate holding part 222 is released, and the chamber cover 122 movesupward and gets apart from the top plate 123. A position of the topplate 123 in the vertical direction relative to the chamber cover 122and the substrate supporting part 141 is fixed by the first magnet 261and the second magnet 262 of the top plate moving mechanism 126. The topplate 123 is positioned at the first close position and the substrateretaining part 142 is not in contact with the substrate 9. Further, thechamber cover 122 is apart from the chamber sidewall 22, and the annularopening 81 is formed around the substrate 9 (i.e., on the outer side inthe radial direction relative to the substrate 9), between the chambercover 122 and the chamber sidewall 22. Hereinafter, a state of thechamber 12 in which the annular opening 81 is formed will be referred toas the “semiopen state”. The state shown in FIG. 14 will be referred toas the “open state”.

The cup part 161 a moves up from the position shown in FIG. 14 and getspositioned on an outer side relative to the annular opening 81 in theradial direction along the entire circumference thereof as shown in FIG.27. Thus, the cup moving mechanism 162 a (see FIG. 14) moves the cuppart 161 a in the vertical direction between the a first position on theouter side in the radial direction relative to the annular opening 81and a second position (see FIG. 14) lower the first position. In the cuppart 161 a positioned at the first position, the sidewall portion 611thereof is opposed to the annular opening 81 in the radial direction.

In the cup part 161 a positioned at the first position, an upper surfaceof an inner edge of the upper surface portion 612 thereof is in contactwith the lip seal 232 of the chamber cover 122 along the entirecircumference thereof. Between the chamber cover 122 and the uppersurface portion 612 of the cup part 161 a, a first seal 615 forpreventing gas and liquid from passing therethrough is thereby formed.Further, an upper surface of the lower surface portion 613 of the cuppart 161 a is in contact with a lower surface of the outer seal portion169 of the chamber body 121 along the entire circumference thereof.Between the chamber body 121 and the lower surface portion 613 of thecup part 161 a, a second seal 616 for preventing gas and liquid frompassing therethrough is thereby formed.

In the substrate processing apparatus 1 b, the upper surface portion 612of the cup part 161 a is a first seal portion on which the first seal615 is formed at the first position. The lower surface portion 613 ofthe cup part 161 a is a second seal portion on which the second seal 616is formed at the first position. Then, a space which is sealed(hereinafter, referred to as a “sealed space 160”) is formed by thechamber 12 in the semiopen state (i.e., the chamber body 121 and thechamber cover 122 in the state where the annular opening 81 is formed)and the cup part 161 a positioned at the first position. When the sealedspace 160 is formed, nitrogen gas is supplied therein from the uppernozzle 181 and the inside of the sealed space 160 is brought into anitrogen atmosphere (i.e., a low oxygen atmosphere).

Next, the substrate rotating mechanism 15 starts rotation of thesubstrate supporting part 141, the substrate 9, and the top plate 123.Further, the substrate 9 is heated by a not-shown heater. Then, thefirst processing liquid from the first processing liquid supply part 183(see FIG. 16) is supplied onto the center portion of the upper surface91 of the substrate 9 from the upper nozzle 181 opposed to the openingat the center of the top plate 123. The first processing liquid isspread toward the outer peripheral portion of the substrate 9 by therotation of the substrate 9 and the entire upper surface 91 is coatedwith the first processing liquid, and then etching is performed in thenitrogen atmosphere (Step S22).

The first processing liquid is also supplied onto the center portion ofthe lower surface 92 of the substrate 9 from the lower nozzle 182 and isspread toward the outer peripheral portion of the substrate 9 by therotation of the substrate 9. The first processing liquid spattering fromthe upper surface 91 and the lower surface 92 of the substrate 9 isreceived by the cup part 161 a through the annular opening 81 in thesealed space 160 and collected by the first collecting part 194 (seeFIG. 16). If the collected first processing liquid can be recycled, thefirst processing liquid is recycled after removing impurities and thelike therefrom through a filter or the like.

After the etching process using the first processing liquid is finished,the supply of the first processing liquid is stopped. Then the uppernozzle 181 ejects nitrogen gas and the first processing liquid isremoved from the substrate 9 by the rotation of the substrate 9. Sincethe top plate 123 is rotated together with the substrate supporting part141, almost no first processing liquid is left on the lower surface ofthe top plate 123 and no first processing liquid drops from the topplate 123.

Next, as shown in FIG. 28, the chamber cover 122 and the cup part 161 amove downward. Then, by bring the lip seal 231 of the chamber cover 122into contact with the upper portion of the chamber sidewall 22, thechamber 12 forms the sealed internal space 120. In the state where thechamber 12 is sealed, the substrate 9 is directly opposed to the innerwall of the chamber 12, and there is no other liquid receiving parttherebetween. The internal space 120 is in the nitrogen atmosphere(i.e., the low oxygen atmosphere), like the sealed space 160.

When the chamber cover 122 moves, the position of the second magnet 262is controlled by the magnet moving mechanism 263 so that a position ofthe first magnet 261 in the vertical direction should not be changed,that is, the position of the top plate 123 in the vertical directionrelative to substrate supporting part 141 and the substrate 9 should notbe changed. For this reason, the top plate 123 does not move from thefirst close position and the substrate retaining part 142 is not incontact with the substrate 9.

After the internal space 120 is formed, the upper nozzle 181continuously ejects the second processing liquid which is deionizedwater, to thereby supply the second processing liquid onto the centerportion of the upper surface 91 of the substrate 9 being rotated. By therotation of the substrate 9, the second processing liquid is spreadtoward the outer peripheral portion of the substrate 9 and spatteredoutside from the outer peripheral edge of the substrate 9. The secondprocessing liquid is also supplied onto the center portion of the lowersurface 92 of the substrate 9 from the lower nozzle 182 and spreadtoward the outer peripheral portion of the substrate 9 by the rotationof the substrate 9. The used water which is the second processingliquid, spattering from the substrate 9, is received by the inner wallof the chamber 12 (specifically, the respective inner walls of thechamber cover 122 and the chamber sidewall 22) and discarded through thesecond collecting part 195 (Step S23). This also cleans the inside ofthe chamber 12.

After a rinse process using deionized water is performed for apredetermined time period, the supply of the second processing liquid isstopped, and the top plate 123 is moved downward by the top plate movingmechanism 126 and gets positioned at the above-discussed second closeposition as shown in FIG. 29. While the top plate 123 is positioned atthe second close position, the plurality of second contact parts 421 ofthe substrate retaining part 142 are in contact with the outer edge ofthe substrate 9. The substrate retaining part 142 presses the substrate9 toward the substrate supporting part 141 by a weight of the top plate123. The substrate 9 is firmly held, being sandwiched by the substratesupporting part 141 and the substrate retaining part 142 from below andabove.

Subsequently, the third processing liquid which is isopropyl alcohol(IPA) supplied from the third processing liquid supply part 185 isejected from the opening of the center of the top plate 123 through theupper nozzle 181. Then, when the clearance between the top plate 123 andthe substrate 9 is filled with the third processing liquid, the supplyof the third processing liquid is stopped. The deionized water isthereby replaced with the isopropyl alcohol (IPA) on the substrate 9(Step S24). In Step S23, the clearance between the top plate 123 and thesubstrate 9 is not filled with the second processing liquid.

Next, by rotating the substrate 9 at high speed together with thesubstrate supporting part 141, the substrate retaining part 142, and thetop plate 123 in the internal space 120 and ejecting nitrogen gas (N₂)from the upper nozzle 181, the third processing liquid is removed fromthe substrate 9. The rotation speed of the substrate 9 at this time ishigher than that in Steps S22 and S23. The third processing liquidspattering from the substrate 9 is received by the inner wall of thechamber 12 and collected by the second collecting part 195. At thattime, the pressure reducing part 196 reduces pressure in the internalspace 120 of the chamber 12, to thereby promote drying of the substrate9 (Step S25). If the third processing liquid collected by the secondcollecting part 195 is recycled, impurities and the like are removedfrom the third processing liquid. After the drying of the substrate 9 isfinished, the rotation of the substrate 9 is stopped. Further, thesubstrate 9 may be heated in drying.

After that, the pressure in the internal space 120 is increased back tothe normal pressure. Further, the top plate 123 is moved upward by thetop plate moving mechanism 126 and held by the chamber cover 122 asshown in FIG. 26. Then, the chamber cover 122 and the top plate 123 moveup, and the chamber 12 is brought into the open state as shown in FIG.14. In Step S25, since the top plate 123 is rotated together with thesubstrate supporting part 141, almost no liquid is left on the lowersurface of the top plate 123 and no liquid drops from the top plate 123while the chamber cover 122 moves up. The substrate 9 is unloaded by anexternal transfer mechanism (Step S26).

As shown in FIG. 30, the scan nozzle 188 may be additionally provided inthe processing liquid supply part 18 of the substrate processingapparatus 1 b. In the case where the scan nozzle 188 is used, thechamber 12 is brought into the open state where the chamber cover 122 ispositioned above and largely apart from the chamber body 121 and the topplate 123 is apart from the substrate supporting part 141. Therefore,the top plate 123 is not rotated. Between the chamber cover 122 and thechamber body 121, the scan nozzle 188 is inserted from the outside ofthe chamber 12 and moved up to above the substrate 9. The scan nozzle188 is a two-fluid nozzle used, for example, for cleaning with deionizedwater after an SC1 process. The scan nozzle 188 may be any type ofnozzle other than the two-fluid nozzle. The scan nozzle 188 supplies theprocessing liquid onto the upper surface 91 of the substrate 9 whilerepeating a reciprocating motion in the horizontal direction. The scannozzle 188 may be any other type of nozzle for other processings. Theprocessing liquid from the scan nozzle 188 is received by the cup part161 a positioned at the first position and collected, and then recycledas necessary. When the two-fluid nozzle is used as the scan nozzle 188,it is preferable that a not-shown gas exhaust facility should beconnected to the inside of the cover 17 to sufficiently discharge thegenerated processing liquid mist.

Thus, the substrate processing apparatus 1 b can perform a processing onthe substrate 9 in the internal space 120 in the state where the chamber12 is sealed and also can perform a processing on the substrate 9 in thesealed space 160 formed by the chamber 12 and the cup part 161 a whilethe chamber 12 is in the semiopen state. Further, the substrateprocessing apparatus 1 b can perform a processing on the substrate 9while the chamber 12 is in the open state. In other words, as to thesubstrate processing apparatus 1 b, more various processings than in theconventional cases can be performed by one apparatus.

In the following discussion, a processing performed in the internalspace 120 of the chamber 12 will be referred as a “first sealed-stateprocessing”, a processing performed in the sealed space 160 will bereferred as a “second sealed-state processing”, and a processingperformed in the open state will be referred as an “open-stateprocessing”. The substrate processing apparatus 1 b can continuouslyperform the first sealed-state processing which can be performed in thereduced pressure atmosphere and/or pressurized atmosphere, the secondsealed-state processing using the liquid receiving part 16, and theopen-state processing. In a case where the scan nozzle 188 is provided,a processing using the scan nozzle 188 can be also performedcontinuously with the first sealed-state processing and/or the secondsealed-state processing. In the substrate processing apparatus 1 b, thesealed space 160 is not brought into the reduced pressure atmosphere orthe pressurized atmosphere.

In the second sealed-state processing, since the first seal 615 isformed between the cup part 161 a and the chamber cover 122 and thesecond seal 616 is formed between the cup part 161 a and the chamberbody 121, the sealed space 160 is formed by the chamber 12 and the cuppart 161 a. It is thereby possible to receive the processing liquid inthe sealed space 160 by the cup part 161 a disposed outside the chamber12. As discussed above, by performing a processing of the substrate 9while the sealed space 160 is brought into the low oxygen atmosphere, itis possible to prevent or suppress oxidation of a film on the substrate9. Such as a processing performed in the low oxygen atmosphere isuseful, for example, in a polymer removal process or the like for asubstrate on which copper wiring is formed, to prevent oxidation of thecopper wiring. Since the cup part 161 a is disposed outside the chamber12, it is possible to reduce the size of the chamber 12. It is therebypossible, in the first sealed-state processing, to reduce the amount ofgas to fill the internal space 120 of the chamber 12 and shorten thetime required for the processing involving pressure reduction and/orpressurization in the internal space 120.

Further, by collecting the processing liquid by the second collectingpart 195 in the first sealed-state processing and collecting theprocessing liquid by the first collecting part 194 in the secondsealed-state processing, it is possible to separately collect aplurality of kinds of processing liquids while continuously performingprocessings using the plurality of kinds of processing liquids. It isthereby possible to increase the collection efficiency of the processingliquids and prolong the lifetimes of the processing liquids as comparedwith the case where a plurality of kinds of processing liquids arereceived only by the chamber inner wall and collected separately byusing a multiple valve. Further, it is possible to easily preventgeneration of particles, heat generation, smoke generation, or the likecaused by mixture of different kinds of processing liquids.

As discussed above, the cup part 161 a includes the upper surfaceportion 612 having a substantially annular disk-like shape which extendsinward in the radial direction from the upper end portion of thesidewall portion 611, and the upper surface portion 612 comes intocontact with the chamber cover 122. The cup part 161 a further includesthe lower surface portion 613 having a substantially annular disk-likeshape which extends outward in the radial direction from the lower endportion of the sidewall portion 611, and the lower surface portion 613comes into contact with the chamber body 121. Thus, in the substrateprocessing apparatus 1 b, it is possible to easily form the first seal615 between the chamber cover 122 and the cup part 161 a and easily formthe second seal 616 between the chamber body 121 and the cup part 161 a,with a simple structure.

In the substrate processing apparatus 1 b, by using the top plate 123,it is possible to prevent the liquid deposited on the inside of thechamber from dropping onto the substrate 9 with a simple structure.Since the outer peripheral edge of the top plate 123 is positioned onthe outer side relative to the outer peripheral edge of the substrate 9in the radial direction along the entire circumference thereof, theentire outer peripheral portion of the upper surface 91 of the substrate9 is covered by the top plate 123. As a result, it is possible toprevent the processing liquid spattering from the outer peripheral edgeof the substrate 9 from splashing back from the inner wall of thechamber 12 or the like and being deposited on the substrate 9. Further,since a processing is performed while the top plate 123 is positioned atthe second close position, it is possible to reduce the amount ofprocessing liquid required to coat the upper surface 91 of the substrate9. It is also possible to reduce the amount of gas to be suppliedbetween the top plate 123 and the substrate 9.

As discussed above, since the top plate 123 can be moved in the verticaldirection relative to the chamber cover 122, it is possible to rotatethe top plate 123 together with the substrate supporting part 141 bothin the first sealed-state processing and in the second sealed-stateprocessing. Further, by moving the chamber cover 122 up while thechamber cover 122 holds the top plate 123, it is possible to easilyrelease the engagement between the top plate 123 and the substratesupporting part 141. It is also possible to eject the processing liquidfrom the upper nozzle 181 to perform a processing in such an open state.

In the substrate holding part 14, the plurality of first contact parts411 of the substrate supporting part 141 are in contact with the outeredge of the substrate 9 at the plurality of first contact positions,respectively. Then, while the top plate 123 is positioned at the secondclose position, the plurality of second contact parts 421 of thesubstrate retaining part 142 are in contact with the outer edge of thesubstrate 9 at the plurality of second contact positions different fromthe plurality of first contact positions, respectively. Thus, since thestructure for supporting the substrate 9 from below and the structurefor retaining the substrate 9 from above are in contact with substrate 9at different positions in the circumferential direction, it is possibleto prevent the processing liquid moving from the center portion of thesubstrate 9 toward the outer edge thereof from being left near theholding structure for holding the outer edge of the substrate 9. It isalso possible to prevent the processing liquid from splashing back fromthe holding structure.

As discussed above, in the substrate holding part 14, two second contactparts 421 of the substrate retaining part 142 are provided on both sidesof each first contact part 411 of the substrate supporting part 141 inthe circumferential direction, adjacently thereto. Since a stress isthereby imposed on the substrate 9 near each of the first contact parts411 when the substrate supporting part 141 and the substrate retainingpart 142 sandwich the substrate 9 to hold the same, the substrateholding part 14 can firmly hold the substrate 9. Further, two firstcontact parts 411 may be provided on both sides of each second contactpart 421 in the circumferential direction, adjacently thereto. Even insuch a case, since a stress is thereby imposed on the substrate 9 neareach of the second contact parts 421, the substrate holding part 14 canfirmly hold the substrate 9.

As discussed above, the upper end portion of each of the first contactparts 411 of the substrate supporting part 141 is positioned higher thanthe lower end portion of the corresponding second contact part 421 ofthe substrate retaining part 142. In other words, with respect to thevertical direction, each of the first contact parts 411 and thecorresponding second contact part 421 partially overlap each other. Withthis structure, the substrate supporting part 141 and the substrateretaining part 142 can more strongly sandwich the substrate 9, tothereby firmly hold the same. Further, since the substrate retainingpart 142 presses the substrate 9 toward the substrate supporting part141 by the weight of the top plate 123, the substrate 9 can be therebyheld much more firmly.

In the substrate supporting part 141, each of the first contact parts411 comes into contact with the outer edge of the substrate 9 at thefirst sloped surface 412 thereof which goes downward as it goes inwardin the radial direction. This reduces the contact area between the firstcontact part 411 and the substrate 9, and it is thereby possible todecrease the possibility of contamination of the substrate 9 due to thecontact with the substrate supporting part 141. In the substrateretaining part 142, each of the second contact parts 421 comes intocontact with the outer edge of the substrate 9 at the second slopedsurface 422 thereof which goes upward as it goes inward in the radialdirection. This reduces the contact area between the second contact part421 and the substrate 9, and it is thereby possible to decrease thepossibility of contamination of the substrate 9 due to the contact withthe substrate retaining part 142.

The top plate moving mechanism 126 moves the top plate 123 relative tothe chamber cover 122 by using magnetic force. It is thereby possible toeasily change a distance between the top plate 123 and the substrate 9in the vertical direction without providing any moving mechanismdirectly connected to the top plate 123. As a result, in the firstsealed-state processing and second sealed-state processing, it ispossible to easily change the distance between the top plate 123 and thesubstrate 9 even in the sealed internal space 120 or the sealed space160.

The top plate moving mechanism 126 includes the first magnet 261provided at the top plate shaft 235, the second magnet 262 provided atthe chamber cover 122, and the magnet moving mechanism 263 for movingthe second magnet 262 in the vertical direction. Thus, in the substrateprocessing apparatus 1 b, it is possible to easily move the top plate123 in the vertical direction with a simple structure.

As discussed above, the substrate retaining part 142 is fixed to thelower surface of the top plate 123, to retain the substrate 9 from abovewhile the chamber 12 is brought into the sealed state and the top plate123 is positioned at the second close position. Further, the substrateretaining part 142 is apart from the substrate 9 while the top plate 123is positioned at the first close position. Thus, by changing theposition of the top plate 123 by the top plate moving mechanism 126, itis possible to easily switch the state for holding the substrate 9 bythe substrate holding part 14 in accordance with the kind of processingto be performed on the substrate 9.

In the substrate processing apparatus 1 b, while the top plate 123 ispositioned at the second close position, by ejecting the processingliquid from the center of the top plate 123 through the upper nozzle181, the clearance between the top plate 123 and the substrate 9 isfilled with the processing liquid. As a result, it is possible to reducethe amount of processing liquid to be used. Further, since theprocessing liquid on the upper surface 91 of the substrate 9 can beprevented from coming into contact with the surrounding gas, it ispossible to suppress oxidation of the processing liquid when thesurrounding gas contains oxygen.

In the substrate processing apparatus 1 b, the rotor part 152 isdisposed in the internal space 120 of the chamber 12 and the stator part151 is disposed outside the chamber 12. It is possible to easily formthe internal space 120 having excellent hermeticity. As a result, it ispossible to easily achieve single-substrate processing on the substrate9 in the sealed internal space 120. Further, it is possible to easilyprovide various structures such as the lower nozzle 182 or the like tothe chamber bottom 21 as compared with in an apparatus in which a motoris provided below the chamber bottom.

In the substrate rotating mechanism 15, the rotor part 152 rotates,being in a floating state in the internal space 120. For this reason, itis not necessary to provide any structure for supporting the rotor part152, and it is thereby possible to reduce the size and simplify theconfiguration of the substrate processing apparatus 1 b. Since no dustor the like is generated due to friction between the rotor part 152 andthe supporting structure, it is possible to improve cleanability of theinternal space 120. Furthermore, since no friction resistance caused bythe supporting structure is exerted on the rotor part 152, it ispossible to easily rotate the rotor part 152 at high speed.

FIG. 31 is a cross section showing a substrate processing apparatus 1 cin accordance with the fourth preferred embodiment of the presentinvention. In the substrate processing apparatus 1 c, a cup part 161 bhaving a shape different from that of the cup part 161 a shown in FIG.14 is provided in the liquid receiving part 16, and the chamber body 121includes an annular liquid pooling part 166 a disposed outside theliquid receiving recessed portion 165 a. Other constituent elements areidentical to those of the substrate processing apparatus 1 b shown inFIG. 14, and in the following description, constituent elementsidentical to or corresponding to those of the substrate processingapparatus 1 b are represented by the same reference signs.

As shown in FIG. 31, the liquid pooling part 166 a is constituted ofmembers which constitute the chamber sidewall 22 and the liquidreceiving recessed portion 165 a. The liquid pooling part 166 a is soprovided outside the outer wall portion 168 surrounding an outerperiphery of the liquid receiving recessed portion 165 a, as to surroundthe liquid receiving recessed portion 165 a along the entirecircumference thereof in the circumferential direction. The liquidpooling part 166 a pools therein a seal liquid 167. As the seal liquid167, for example, deionized water is used.

FIG. 32 is a cross section showing part of the substrate processingapparatus 1 c. The cup part 161 b includes the sidewall portion 611, theupper surface portion 612, and an outer cylindrical portion 614. Thesidewall portion 611 has a substantially cylindrical shape about thecentral axis J1. The upper surface portion 612 has a substantiallyannular disk-like shape about the central axis J1 and extends inward andoutward in the radial direction from the upper end portion of thesidewall portion 611. The outer cylindrical portion 614 has asubstantially cylindrical shape about the central axis J1 and extendsdownward from an outer edge of the upper surface portion 612. The outercylindrical portion 614 is disposed around the sidewall portion 611,being apart from the sidewall portion 611. An inner peripheral surfaceof the outer cylindrical portion 614 is opposed to an outer peripheralsurface of the sidewall portion 611 in the radial direction. In thestate of FIG. 32, most part of the sidewall portion 611 except an upperportion thereof is positioned inside the liquid receiving recessedportion 165 a, and most part of the outer cylindrical portion 614 exceptan upper portion thereof is positioned inside the seal liquid 167 pooledin the liquid pooling part 166 a.

FIG. 33 is a cross section showing part of the substrate processingapparatus 1 c in a state where the second sealed-state processing isperformed in the sealed space 160. As shown in FIG. 33, the chamber 12is in the semiopen state, and the annular opening 81 is formed betweenthe chamber body 121 and the chamber cover 122. The cup part 161 b ispositioned at the first position on the outer side in the radialdirection relative to the annular opening 81, and the sidewall portion611 is opposed to the annular opening 81 in the radial direction.

Like in the substrate processing apparatus 1 b, in the cup part 161 bpositioned at the first position, the upper surface of the inner edgepart of the upper surface portion 612 is in contact with the lip seal232 of the chamber cover 122 along the entire circumference thereof.Between the chamber cover 122 and the upper surface portion 612 of thecup part 161 b, the first seal 615 for preventing gas and liquid frompassing therethrough is thereby formed. Further, a lower end portion ofthe outer cylindrical portion 614 of the cup part 161 b is positioned inthe seal liquid 167 pooled in the liquid pooling part 166 a of thechamber body 121 along the entire circumference thereof. Between thechamber body 121 and the outer cylindrical portion 614 of the cup part161 b, the second seal 616 for preventing gas and liquid from passingtherethrough is thereby formed.

The upper surface portion 612 of the cup part 161 b is the first sealportion on which the first seal 615 is formed at the first position. Theouter cylindrical portion 614 is the second seal portion on which thesecond seal 616 is formed at the first position. Then, the sealed space160 is formed by the chamber 12 in the semiopen state and the cup part161 b positioned at the first position.

Thus, in the substrate processing apparatus 1 c, it is possible toeasily form the first seal 615 between the chamber cover 122 and the cuppart 161 b and easily form the second seal 616 between the chamber body121 and the cup part 161 b, with a simple structure. Further, since thesecond seal 616 is formed by positioning the lower end portion of theouter cylindrical portion 614 of the cup part 161 b in the seal liquid167, it is possible to reliably prevent gas and liquid from leaking outfrom the second seal 616.

FIG. 34 is a cross section showing part of a substrate processingapparatus 1 d in accordance with the fifth preferred embodiment of thepresent invention. In the substrate processing apparatus 1 d, a cup part161 c having a shape and a structure different from those of the cuppart 161 a shown in FIG. 14 is provided in the liquid receiving part 16.Other constituent elements are identical to those of the substrateprocessing apparatus 1 b shown in FIG. 14, and in the followingdescription, constituent elements identical to or corresponding to thoseof the substrate processing apparatus 1 b are represented by the samereference signs.

As shown in FIG. 34, the cup part 161 c includes the sidewall portion611, the upper surface portion 612, and a bellows 617. The sidewallportion 611 has a substantially cylindrical shape about the central axisJ1. The upper surface portion 612 has a substantially annular disk-likeshape about the central axis J1 and extends inward and outward in theradial direction from the upper end portion of the sidewall portion 611.The bellows 617 has a substantially cylindrical shape about the centralaxis J1 and is extendable in the vertical direction. The bellows 617 isformed of a material impervious to gas and liquid.

The bellows 617 is provided around the sidewall portion 611 along theentire circumference thereof. An upper end portion of the bellows 617 isconnected to a lower surface of the outer edge of the upper surfaceportion 612 along the entire circumference thereof. In other words, theupper end portion of the bellows 617 is indirectly connected to thesidewall portion 611 through the upper surface portion 612. A connectingpart between the bellows 617 and the upper surface portion 612 preventsgas and liquid from passing therethrough. A lower end portion of thebellows 617 is indirectly connected to the chamber body 121 through themembers constituting the chamber sidewall 22 and the liquid receivingrecessed portion 165 a. A connecting part between the lower end portionof the bellows 617 and the members constituting the chamber sidewall 22and the liquid receiving recessed portion 165 a also prevents gas andliquid from passing therethrough.

FIG. 35 is a cross section showing part of the substrate processingapparatus 1 d in a state where the second sealed-state processing isperformed in the sealed space 160. As shown in FIG. 35, the chamber 12is in the semiopen state, and the annular opening 81 is formed betweenthe chamber body 121 and the chamber cover 122. The cup part 161 c ispositioned at the first position on the outer side in the radialdirection relative to the annular opening 81, and the sidewall portion611 is opposed to the annular opening 81 in the radial direction.

Like in the substrate processing apparatus 1 b, in the cup part 161 cpositioned at the first position, the upper surface of the inner edgepart of the upper surface portion 612 is in contact with the lip seal232 of the chamber cover 122 along the entire circumference thereof.Between the chamber cover 122 and the upper surface portion 612 of thecup part 161 c, the first seal 615 for preventing gas and liquid frompassing therethrough is thereby formed. Further, around the sidewallportion 611, the upper end portion of the bellows 617 is connected tothe upper surface portion 612 and the lower end portion of the bellows617 is indirectly connected to the chamber body 121. Between the chamberbody 121 and the cup part 161 c, the second seal 616 for preventing gasand liquid from passing therethrough is thereby formed.

The upper surface portion 612 of the cup part 161 c is the first sealportion on which the first seal 615 is formed at the first position. Thebellows 617 is the second seal portion on which the second seal 616 isformed at the first position. Then, the sealed space 160 is formed bythe chamber 12 in the semiopen state and the cup part 161 c positionedat the first position.

Thus, in the substrate processing apparatus 1 d, it is possible toeasily form the first seal 615 between the chamber cover 122 and the cuppart 161 c and easily form the second seal 616 between the chamber body121 and the cup part 161 c, with a simple structure. Further, since thesecond seal 616 is formed by connecting the lower end portion of thebellows 617 of the cup part 161 c to the chamber body 121, it ispossible to reliably prevent gas and liquid from leaking out from thesecond seal 616.

FIG. 36 is a cross section showing a substrate processing apparatus 1 ein accordance with the sixth preferred embodiment of the presentinvention. In the substrate processing apparatus 1 e, the chamber cover122 holds the top plate 123 in a different manner. Other constituentelements are identical to those of the substrate processing apparatus 1b shown in FIG. 14, and in the following description, constituentelements identical to or corresponding to those of the substrateprocessing apparatus 1 b are represented by the same reference signs.

As shown in FIG. 36, the chamber cover 122 includes an annular plateholding part 222 a. The plate holding part 222 a includes a cylindricalportion 223 having a substantially cylindrical shape about the centralaxis J1 and a flange portion 224 having a substantially disk-like shapeabout the central axis J1. The cylindrical portion 223 extends downwardfrom the lower surface of the chamber cover 122. The flange portion 224extends outward in the radial direction from a lower end of thecylindrical portion 223.

The top plate 123 includes an annular held part 237. The held part 237includes a cylindrical portion 238 having a substantially cylindricalshape about the central axis J1 and a flange portion 239 having asubstantially disk-like shape about the central axis J1. The cylindricalportion 238 extends upward from the upper surface of the top plate 123.The flange portion 239 extends inward in the radial direction from anupper end of the cylindrical portion 238. The cylindrical portion 238 ispositioned on an outer side in the radial direction relative to thecylindrical portion 223 of the plate holding part 222 a and opposed tothe cylindrical portion 223 in the radial direction. The flange portion239 is positioned above the flange portion 224 of the plate holding part222 a and opposed to the flange portion 224 in the vertical direction.By bringing a lower surface of the flange portion 239 of the held part237 into contact with an upper surface of the flange portion 224 of theplate holding part 222 a, the top plate 123 gets so attached to thechamber cover 122 as to be suspended from the chamber cover 122.

FIG. 37 is a cross section showing part of the substrate processingapparatus 1 e in a state where the second sealed-state processing isperformed in the sealed space 160. As shown in FIG. 37, the chamber 12is in the semiopen state, and the annular opening 81 is formed betweenthe chamber body 121 and the chamber cover 122. The cup part 161 a ispositioned at the first position on the outer side in the radialdirection relative to the annular opening 81, and the sidewall portion611 is opposed to the annular opening 81 in the radial direction.

Like in the substrate processing apparatus 1 b, in the cup part 161 apositioned at the first position, the upper surface of the inner edgepart of the upper surface portion 612 is in contact with the lip seal232 of the chamber cover 122 along the entire circumference thereof.Between the chamber cover 122 and the upper surface portion 612 of thecup part 161 a, the first seal 615 for preventing gas and liquid frompassing therethrough is thereby formed. Further, the upper surface ofthe lower surface portion 613 thereof is in contact with the lowersurface of the outer seal portion 169 of the chamber body 121 along theentire circumference thereof. Between the chamber body 121 and the lowersurface portion 613 of the cup part 161 a, the second seal 616 forpreventing gas and liquid from passing therethrough is thereby formed.

By causing the second engaging parts 242 to be engaged with the firstengaging parts 241, respectively, the top plate 123 gets engaged withthe supporting-part base 413 of the substrate supporting part 141 in thecircumferential direction. In other words, the first engaging parts 241and the second engaging parts 242 regulate the position of the top plate123 relative to the substrate supporting part 141 in the rotationdirection. The plurality of second contact parts 421 of the substrateretaining part 142 are in contact with the outer edge of the substrate9.

The flange portion 239 of the held part 237 is positioned above theflange portion 224 of the plate holding part 222 a, being aparttherefrom. In the state of FIG. 37, a distance between the top plate 123and the chamber cover 122 in the vertical direction is smaller than thatshown in FIG. 36. In other words, the top plate 123 is attached to thechamber cover 122 with the distance with the chamber cover 122 in thevertical direction being changeable.

In the state of FIG. 37, the plate holding part 222 a is not in contactwith the held part 237, and the top plate 123 is supported by thesubstrate supporting part 141 with the substrate retaining part 142 andthe substrate 9 interposed therebetween. The substrate retaining part142 presses the substrate 9 toward the substrate supporting part 141 bythe weight of the top plate 123.

FIG. 38 is a cross section taken at a position different from that ofFIG. 37, showing part of the substrate processing apparatus 1 e in thestate where the second sealed-state processing is performed. As shown inFIG. 38, on the lower surface of the top plate 123 and thesupporting-part base 413 of the substrate supporting part 141, providedare a pair of magnets 143 a and 143 b, respectively, which are opposedto each other in the vertical direction (hereinafter, two magnets willbe collectively referred to also as a “magnet pair 143”). In thesubstrate processing apparatus 1 e, a plurality of magnet pairs 143 arearranged at regular angular intervals at positions different from thoseof the first contact parts 411, the second contact parts 421, the firstengaging parts 241, and the second engaging parts 242 (see FIG. 37) inthe circumferential direction. While the substrate retaining part 142 isin contact with the substrate 9, a downward force is exerted on the topplate 123 by the magnetic force (attractive force) exerted between eachpair of magnets 143 a and 143 b. The substrate retaining part 142thereby presses the substrate 9 toward the substrate supporting part 141as shown in FIG. 37.

In the substrate processing apparatus 1 e, since the substrate retainingpart 142 presses the substrate 9 toward the substrate supporting part141 by the weight of the top plate 123 and the magnetic force of theplurality of magnet pairs 143, the substrate 9 can be firmly held, beingsandwiched by the substrate supporting part 141 and the substrateretaining part 142 from below and above. Further, only one magnet pair143 may be provided, and even in such a case, the substrate 9 can befirmly held by the magnetic force of the magnet pair 143.

In the states of FIGS. 37 and 38, as discussed above, the plate holdingpart 222 a is not in contact with the held part 237, and the top plate123 is rotated by the substrate rotating mechanism 15 together with thesubstrate holding part 14 and the substrate 9 held by the substrateholding part 14, independently of the chamber cover 122.

FIG. 39 is a cross section showing part of the substrate processingapparatus 1 e in a state where the first sealed-state processing isperformed in the internal space 120 of the chamber 12. As shown in FIG.39, the chamber 12 is in the sealed state, and the cup part 161 a ispositioned at the above-described second position. In the state of FIG.39, the distance between the top plate 123 and the chamber cover 122 inthe vertical direction is smaller than those shown in FIGS. 36 and 37.Further, in the state of FIG. 39, the distance between the top plate 123and the substrate 9 in the vertical direction is the same as that shownin FIG. 37, and the substrate retaining part 142 is in contact with theouter edge of the substrate 9 to press the substrate 9 toward thesubstrate supporting part 141. The plate holding part 222 a is not incontact with the held part 237, and the top plate 123 is rotatedtogether with the substrate holding part 14 and the substrate 9 held bythe substrate holding part 14, independently of the chamber cover 122.

When the chamber cover 122 moves up to bring the chamber 12 into theopen state of FIG. 36, a plurality of projections provided on the uppersurface of the flange portion 224 of the plate holding part 222 a getsengaged with an annular groove portion provided in the lower surface ofthe flange portion 239 of the held part 237, and the top plate 123 isthereby aligned with respect to the chamber cover 122. As a structurefor alignment, any other structure may be used.

Like in the substrate processing apparatus 1 b, also in the substrateprocessing apparatus 1 e, the processing liquid can be received in thesealed space 160 by the cup part 161 a disposed outside the chamber 12.Further, it is possible to prevent the processing liquid from being leftnear the holding structure for holding the outer edge of the substrate9. It is also possible to prevent the processing liquid from splashingback against the holding structure. In the substrate processingapparatus 1 e, the scan nozzle 188 shown in FIG. 30 may be additionallyprovided.

Though the preferred embodiments of the present invention have beendiscussed above, the present invention is not limited to theabove-discussed preferred embodiments, but allows various variations.

In the substrate processing apparatuses 1 and 1 a to 1 e, other variousprocessings may be performed. For example, a processing using an SPM(sulfuric acid/hydrogen peroxide/water mixture) may be performed. Theorder or the kind of processings to be performed in the open state, thesemiopen state, and the sealed state may be changed in various ways.

All the processing liquid received by the cup part of the liquidreceiving part 16 may be discarded. Instead, all the processing liquidreceived by the cup part of the liquid receiving part 16 may becollected. The processing liquid received by the chamber 12 may be alsodiscarded or collected. The number of cup parts may be one or more thanthree. A plurality of cup parts may be move up and down at the sametime. If no problem occurs even when processing liquids are mixed tosome degree, each cup part may receive a plurality of kinds ofprocessing liquids. In this case, a multiple valve may be provided at aliquid discharge path from the cup part.

In the cup parts 161 a, 161 b, and 161 c, a portion other than the uppersurface portion 612 (for example, the sidewall portion 611) may comeinto contact with the chamber cover 122, to thereby form the first seal615 between the any one of the cup parts 161 a, 161 b, and 161 c and thechamber cover 122. The respective shapes of the cup parts 161 a, 161 b,and 161 c may be changed as appropriate.

The respective shapes of the upper nozzle 181 and the lower nozzle 182are not limited to the protruding shape. Any portion having an ejectionport for ejecting the processing liquid is included in the concept ofthe nozzle in the preferred embodiments of the present invention.

The chamber opening and closing mechanism may be any mechanism foropening and closing the chamber 12 in various manners, and in otherwords, may be any mechanism for moving up and down the chamber movablepart including the upper portion or the lower portion of the chamber 12relative to the other portion of the chamber 12. With the movement ofthe chamber movable part, the annular opening 81 is formed around thesubstrate 9.

For example, the chamber opening and closing mechanism 131 does notnecessarily have to move the chamber cover 122 in the verticaldirection, but may move the chamber body 121 in the vertical directionwith the chamber cover 122 fixed, to thereby switch the state of thechamber 12 among the open state, the semiopen state, and the sealedstate.

In the substrate processing apparatuses 1 and 1 a, for the engagementbetween the top plate 123 and the substrate holding part 14 in thecircumferential direction, any other structure may be used. For example,projections protruding downward from the top plate 123 and projectionsprotruding upward from the substrate holding part 14 may only come intocontact with each other in the circumferential direction.

In the substrate processing apparatuses 1 b to 1 e, as the mechanism forengagement between the top plate 123 and the substrate supporting part141 in the circumferential direction, any structure different from thefirst engaging parts 241 and the second engaging parts 242 may be used.For example, projections protruding downward from the top plate 123 andprojections protruding upward from the supporting-part base 413 of thesubstrate supporting part 141 may only come into contact with each otherin the circumferential direction.

The structure of the substrate rotating mechanism 15 shown in FIG. 1 maybe changed in various ways. The rotor part 152 does not necessarily haveto rotate in a floating state, but there may be a case where a structuresuch as a guide or the like for mechanically supporting the rotor part152 is provided in the internal space 120 of the chamber 12 and therotor part rotates along the guide.

The substrate rotating mechanism 15 does not necessarily have to be ahollow motor, but a substrate rotating mechanism 15 a which is a shaftrotation type motor shown in FIG. 40 may be used. The substrate rotatingmechanism 15 a is disposed below the chamber 12 outside the chamber 12.In the substrate supporting part 141, a connecting part 414 having asubstantially disk-like shape is fixed to the lower surface of thesupporting-part base 413 having a substantially annular disk-like shape.A rotation shaft 155 of the substrate rotating mechanism 15 a isconnected to an opening of a center of the connecting part 414. Thelower nozzle 182 is provided at an upper end of the rotation shaft 155of the substrate rotating mechanism 15 a.

In the substrate processing apparatus 1, one of the upper nozzle 181 andthe lower nozzle 182 may be omitted. In other words, the processingliquid supply part 18 supplies the processing liquid onto the uppersurface or the lower surface of the substrate 9. Further, the top plate123 may be omitted.

The structure of the chamber cover 122 and the top plate 123 may be usedin an apparatus for performing only a sealed-state processing, in whichthe liquid receiving part 16 is omitted.

In the top plate moving mechanism 126, it is not always necessary toprovide the magnet moving mechanism 263. There may be a case, forexample, where a plurality of annular electromagnets are arranged in thevertical direction around the accommodating part 221 of the chambercover 122 and by selectively turning on one or two electromagnets, aposition of the first magnet 261 in the vertical direction is controlledand the top plate 123 is thereby moved in the vertical direction. Alsoin the sealed space 160 where the second sealed-state processing isperformed, the top plate moving mechanism 126 may change the position ofthe top plate 123.

The magnet pair 143 in the substrate processing apparatus 1 e may beprovided at the top plate 123 and the substrate supporting part 141 inthe substrate processing apparatuses 1 b, 1 c, and 1 d.

Though the top plate 123 is provided as the upper rotating member whichis disposed above the substrate supporting part 141 and rotated togetherwith the substrate supporting part 141 in the above-discussed substrateprocessing apparatuses, instead of the top plate 123, for example, anupper rotating member having a substantially annular disk-like shape maybe provided, on a lower surface of which the substrate retaining part142 is provided. In this case, in the substrate processing apparatuses 1b, 1 c, and 1 d, the top plate shaft 235 and the substantially annulardisk-like upper rotating member are connected to each other with aconnecting part which extends radially from the top plate shaft 235.Further, in the substrate processing apparatus 1 e, the held part 237 isfixed to an upper surface of the upper rotating member. In theabove-discussed substrate processing apparatuses, the upper rotatingmember may be omitted.

Though two second contact parts 421 of the substrate retaining part 142are provided on both sides of each first contact part 411 of thesubstrate supporting part 141 in the circumferential directionadjacently thereto in the substrate holding part 14, the two secondcontact parts 421 disposed on both sides of one first contact part 411adjacently thereto may be two portions of one member, which are apartfrom each other in the circumferential direction. Further, in the casewhere two first contact parts 411 are provided on both sides of eachsecond contact part 421 in the circumferential direction adjacentlythereto, the two first contact parts 411 may be two portions of onemember, which are apart from each other in the circumferentialdirection. The first contact part 411 and the second contact part 421 donot necessarily have to be disposed adjacently to each other, but, forexample, four first contact parts 411 and four second contact parts 421may be arranged alternately at regular angular intervals.

The substrate holding part 14 does not necessarily have to beconstituted of two separate parts, i.e., the substrate supporting part141 and the substrate retaining part 142. There may be a case, forexample, where a plurality of holding structures each having a recessedportion which is recessed outward in the radial direction are providedon the supporting-part base 413 and by inserting the outer edge of thesubstrate 9 into the recessed portion of each of the holding structures,each of the holding structures comes into contact with the substrate 9from below, side, and above, to thereby hold the substrate 9.

In the above-discussed Steps S21 to 26, when it is intended that thethird processing liquid should be collected separately from the firstand second processing liquids, the chamber 12 is brought into the sealedstate from the semiopen state between Steps S23 and S24. Further, in theprocessings on the substrate 9, it is not always necessary to supply theprocessing liquid onto the lower surface 92 of the substrate 9. In theabove-discussed substrate processing apparatuses, various processingsother than those shown in Steps S21 to S26 may be performed by supplyingvarious kinds of processing liquids (for example, SPM (sulfuricacid/hydrogen peroxide/water mixture)) onto the substrate 9. Theatmosphere in the internal space 120 of the chamber 12 and the sealedspace 160 may be changed in various ways. Further, it is not alwaysnecessary to provide the chamber 12.

The substrate to be processed in the substrate processing apparatus isnot limited to a semiconductor substrate but may be a glass substrate orother substrates.

The configurations in the above-discussed preferred embodiments andvariations may be combined as appropriate only if those do not conflictwith one another.

While the invention has been shown and described in detail, theforegoing description is in all aspects illustrative and notrestrictive. It is therefore understood that numerous modifications andvariations can be devised without departing from the scope of theinvention. This application claims priority benefit under 35 U.S.C.Section 119 of Japanese Patent Application No. 2012-191284 filed in theJapan Patent Office on Aug. 31, 2012, Japanese Patent Application No.2012-191285 filed in the Japan Patent Office on Aug. 31, 2012, JapanesePatent Application No. 2012-210558 filed in the Japan Patent Office onSep. 25, 2012, Japanese Patent Application No. 2012-210559 filed in theJapan Patent Office on Sep. 25, 2012, and Japanese Patent ApplicationNo. 2012-210560 filed in the Japan Patent Office on Sep. 25, 2012, theentire disclosures of which are incorporated herein by reference.

REFERENCE SIGNS LIST

-   1, 1 a to 1 e Substrate processing apparatus-   9 Substrate-   12 Chamber-   14 Substrate holding part-   15, 15 a Substrate rotating mechanism-   18 Processing liquid supply part-   81 Annular opening-   91 Upper surface (of Substrate)-   120 Internal space-   121 Chamber body-   122 Chamber cover-   123 Top plate-   124 Chamber fixed part-   125 chamber movable part-   126 Top plate moving mechanism-   131 Cover up-and-down moving mechanism (Chamber opening and closing    mechanism)-   132 Chamber up-and-down moving mechanism-   141 Substrate supporting part-   142 Substrate retaining part-   143 a, 143 b Magnet-   151 Stator part-   152 Rotor part-   160 Sealed space-   161 First cup part-   161 a to 161 c Cup part-   162 a Cup moving mechanism-   163 Second cup part-   164 Second cup up-and-down moving mechanism-   166 a Liquid pooling part-   167 Seal liquid-   172 Partition plate-   181 Upper nozzle-   186 Gas supply part-   187 Pressurizing part-   188 Scan nozzle-   196 Pressure reducing part-   221 Accommodating part-   235 Top plate shaft-   241 First engaging part-   242 Second engaging part-   261 First magnet-   262 Second magnet-   263 Magnet moving mechanism-   411 First contact part-   412 First sloped surface-   421 Second contact part-   422 Second sloped surface-   611 Sidewall portion-   612 Upper surface portion-   613 Lower surface portion-   614 Outer cylindrical portion-   615 First seal-   616 Second seal-   617 Bellows-   J1 Central axis-   S11 to S16, S21 to S26 Step

1. A substrate processing apparatus for processing a substrate,comprising: a substrate supporting part for supporting a substratehorizontally from below; an upper rotating member disposed above saidsubstrate supporting part; a position regulating member for regulating aposition of said upper rotating member relative to said substratesupporting part in a circumferential direction about a central axisoriented in a vertical direction; a substrate retaining part fixed tosaid upper rotating member, for retaining said substrate held by saidsubstrate supporting part from above; a substrate rotating mechanism forrotating said substrate together with said substrate supporting part,said substrate retaining part, and said upper rotating member; and aprocessing liquid supply part for supplying a processing liquid ontosaid substrate, wherein said substrate supporting part comprises aplurality of first contact parts which come into contact with an outeredge of said substrate at a plurality of first contact positions,respectively, and said substrate retaining part comprises a plurality ofsecond contact parts which come into contact with said outer edge ofsaid substrate at a plurality of second contact positions different fromsaid plurality of first contact positions, respectively, in saidcircumferential direction.
 2. The substrate processing apparatusaccording to claim 1, wherein two second contact parts are disposed onboth sides of each first contact part of said plurality of first contactparts in said circumferential direction, being adjacent to said eachfirst contact part, or two first contact parts are disposed on bothsides of each second contact part of said plurality of second contactparts in said circumferential direction, being adjacent to said eachsecond contact part.
 3. The substrate processing apparatus according toclaim 1, wherein each of said plurality of first contact parts has afirst sloped surface which goes downward as it goes inward in a radialdirection about said central axis, and said outer edge of said substrateis in contact with said first sloped surface.
 4. The substrateprocessing apparatus according to claim 1, wherein each of saidplurality of second contact parts has a second sloped surface which goesupward as it goes inward in a radial direction about said central axis,and said outer edge of said substrate is in contact with said secondsloped surface.
 5. The substrate processing apparatus according to claim1, wherein an upper end portion of each of said plurality of firstcontact parts is positioned to be higher than a lower end portion ofeach of said plurality of second contact parts.
 6. The substrateprocessing apparatus according to claim 1, further comprising: a chamberhaving a chamber body and a chamber cover and forming an internal spacewhich is sealed by closing an upper opening of said chamber body by saidchamber cover; and a chamber opening and closing mechanism for movingsaid chamber cover in said vertical direction relative to said chamberbody, wherein said substrate supporting part is disposed in saidchamber, and said chamber cover is moved relatively in said verticaldirection, together with said upper rotating member supported by saidchamber cover.
 7. The substrate processing apparatus according to claim1, wherein said upper rotating member has a plate-like shapeperpendicular to said central axis, and a lower surface of said upperrotating member is opposed to an upper surface of said substrate.
 8. Thesubstrate processing apparatus according to claim 7, wherein an outerperipheral edge of said upper rotating member is positioned on an outerside in a radial direction about said central axis relative to an outerperipheral edge of said substrate along the entire circumferencethereof.
 9. The substrate processing apparatus according to claim 1,wherein a pair of magnets are provided on said substrate supporting partand said upper rotating member, respectively, being opposed to eachother in said vertical direction, and said substrate retaining partpresses said substrate toward said substrate supporting part by magneticforce exerted between said pair of magnets.
 10. The substrate processingapparatus according to claim 1, wherein said substrate retaining partpresses said substrate toward said substrate supporting part by a weightof said upper rotating member.
 11. The substrate processing apparatusaccording to claim 1, wherein said substrate rotating mechanismcomprises: an annular rotor part disposed in said internal space of saidchamber, to which said substrate supporting part is attached; and astator part disposed around said rotor part outside said chamber, forgenerating a rotating force between itself and said rotor part.
 12. Thesubstrate processing apparatus according to claim 11, wherein said rotorpart rotates, being in a floating state in said internal space, bymagnetic force exerted between itself and said stator part.